Preparation and Properties of PZT Thin Films by Metal Alkoxides-DEA Method

Suzuki, Toshimitsu; Matsuki, Michiyasu; Matsuda, Yoshio; Kobayashi, Keisuke; Takahashi, Yasutaka

doi:10.2109/jcersj.98.754

Cited by 16 publications

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“…These potential applications result from the superior properties of PZT, including a high dielectric constant, large remnant polarization, and large piezoelectric and pyroelectric coefficients. Crystalline orientations of PZT films are affected by the fabrication conditions and the nature of the substrates [9][10][11]. Since the ferroelectric crystals of the perovskite structure have a polar axis, these materials, such as single-crystal barium titanates, show different dielectric properties depending on a-axis and c-axis directions [12].…”

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confidence: 99%

Si integrated pyroelectric sensor array using epitaxial γ-Al 2 O 3 /Si substrates and epitaxial PZT thin films

et al. 2009

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In this paper, we report that integrated pyroelectric infrared(IR) sensor array using surface micromachine technique with nMOS/nJFET devices on epitaxial γ-Al 2 O 3 /Si substrates has been successfully fabricated. Orientation and crystallinity control of pyroelectric and ferroelectric films are important to archive high sensitivity pyroelectric IR detector. We propose epitaxial γ-Al 2 O 3 thin films as buffer layer on Si substrates to control them. Each pixel of fabricated IR sensor array has a thermally isolated Au/PZT(001)/Pt(001)/γ-Al 2 O 3 stacked membrane detector, a low noise nJFET source follower and a switching nMOSFET. A voltage sensitivity of a fabricated detector is increased by forming thermal isolated structure. The fabricated sensor operated under a chopping frequency of 100 Hz. The R V , NEP and D* at 30 Hz are 1703 V/W, 7.22 × 10 -11 WHz -1/2 and 1.38 × 10 8 cmHz 1/2 W -1 , respectively. This sensor will have potential for Si integrated pyroelectric IR imager.

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