Preparation and Properties of Refractory Semiconducting Materials

Numerical simulation of liquid phase electro-epitaxial selective area growth

“…Our last set of numerical experiments was conducted with reversed current, that is with current from the solution into the substrate ðI 0 o0Þ: In a real crystal growth process, applying the current in this direction could result in dissolution of the crystal instead of growth [6], although in theory the reverse-direction current could be superimposed on a transient cooling of the solution to yield net growth. For our simple model, reversed current induces interfacial instability.…”

“…Such crystal growth technique is called liquid phase electroepitaxy (LPEE) when growth is on regular, non-patterned substrates. LPEE was studied intensively during the last two decades, see for example [4][5][6][7][8]. Among physical processes which may contribute to LPEE crystal growth are diffusion, electromigration, convection, heat transfer, and thermoelectric effects, e.g.…”