Preparation and semiconducting properties of Th3As4

Henkie, Z.; Markowski, P.J.

doi:10.1016/0022-3697(78)90197-x

Cited by 24 publications

(4 citation statements)

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“…Previous work on lanthanide- [65,, thorium- [551][552][553][554][555][556][557][558][559][560][561][562][563][564][565][566][567][568], and uranium-based [521,551,557,560,564, systems is summarized in table 8 and figures 7-9. Some variations in the reported data can probably be attributed to the fragile ground states of f -electron materials and, consequently, sample quality issues [467].…”

Section: Actinide-and Lanthanide-based Thermoelectricsmentioning

confidence: 99%

“…Overall, the values of thermoelectric figure of merit, summarized in figure 8, appear to be rather modest (notice a three-fold vertical axis decrease in figure 8 compared to figure 7). For both room temperature and high-temperature regions, two groups of Th-based materials appear to be promising-ThC [562,563] and compounds with the Th 3 P 4 structure type [553][554][555]568]. However, more Th-based materials need to be examined in order to evaluate the viability of using these materials for thermoelectric applications.…”

Section: Actinide-and Lanthanide-based Thermoelectricsmentioning

confidence: 99%

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Key properties of inorganic thermoelectric materials—tables (version 1)

et al. 2022

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This paper presents tables of key thermoelectric properties, which define thermoelectric conversion efficiency, for a wide range of inorganic materials. The 12 families of materials included in these tables are primarily selected on the basis of well established, internationally-recognised performance and their promise for current and future applications: Tellurides, Skutterudites, Half Heuslers, Zintls, Mg-Sb Antimonides, Clathrates, FeGa3–type materials, Actinides and Lanthanides, Oxides, Sulfides, Selenides, Silicides, Borides and Carbides. As thermoelectric properties vary with temperature, data are presented at room temperature to enable ready comparison, and also at a higher temperature appropriate to peak performance. An individual table of data and commentary are provided for each family of materials plus source references for all the data.

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Section: Actinide-and Lanthanide-based Thermoelectricsmentioning

confidence: 99%

Section: Actinide-and Lanthanide-based Thermoelectricsmentioning

confidence: 99%

Key properties of inorganic thermoelectric materials—tables (version 1)

et al. 2022

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“…Because the quantity Q(a, m n , m p ) is expected to be weakly T dependent, this expression is a useful tool for identifying energy gap behavior, as was the case for the semiconductor Th 3 As 4 (37). However, as shown in Fig.…”

Section: When Viewed Globally Measurements Of X-ray Diffraction ρ(Tmentioning

confidence: 99%

The filled skutterudite CeOs ₄ As ₁₂ : A hybridization gap semiconductor

Baumbach

Sayles

et al. 2008

Proc. Natl. Acad. Sci. U.S.A.

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X-ray diffraction, electrical resistivity, magnetization, specific heat, and thermoelectric power measurements are presented for single crystals of the new filled skutterudite compound CeOs 4 As 12 , which reveal phenomena that are associated with f-electron-conduction electron hybridization. Valence fluctuations or Kondo behavior dominates the physics down to T ∼ 135 K. The correlated electron behavior is manifested at low temperatures as a hybridization gapinsulating state. The small energy gap 1 /k B ∼ 73 K, taken from fits to electrical resistivity data, correlates with the evolution of a weakly magnetic or nonmagnetic ground state, which is evident in the magnetization data below a coherence temperature T coh ∼ 45 K. Additionally, the low-temperature electronic specific heat coefficient is small, γ ∼ 19 mJ/mol K 2 . Some results for the nonmagnetic analogue compound LaOs 4 As 12 are also presented for comparison purposes. Kondo insulator | rare earth compoundT he ternary transition metal pnictides with the chemical formula MT 4 X 12 (M = alkali metal, alkaline earth, lanthanide, actinide; T = Fe, Ru, Os; X = P, As, Sb), which crystallize in the filled skutterudite structure (space group Im3), exhibit a wide variety of strongly correlated electron phenomena (1-4). Many of these phenomena depend on hybridization between the rare earth or actinide f-electron states and the conduction electron states, which, in some filled skutterudite systems, leads to the emergence of semiconducting behavior. This trend is evident in the cerium transition metal phosphide and antimonide filled skutterudite systems, most of which are semiconductors where the gap size is correlated with the lattice constant (5-7). Although these systems have been studied in detail, the arsenide analogues have received considerably less attention, probably because of materials difficulties inherent to their synthesis. In this article, we present measurements of electrical resistivity ρ, magnetization M, specific heat C, and thermoelectric power S which show that CeOs 4 As 12 has a nonmagnetic or weakly magnetic semiconducting ground state with an energy gap in the range 45 K ≤ /k B ≤ 73 K and a small electronic specific heat coefficient γ ∼ 19 mJ/mol K 2 . Thus, we suggest that CeOs 4 As 12 may be a member of the class of compounds, commonly referred to as hybridization gap semiconductors or, in more modern terms, Kondo insulators. In these materials the localized f-electron states hybridize with the conduction electron states to produce a small gap (∼1-10 meV) in the electronic density of states. Depending on the electron concentration, the Fermi level can be found within the gap, yielding semiconducting behavior, or outside the gap, giving metallic heavy fermion behavior. For a more complete discussion of the topic, we refer the reader to several excellent reviews (8, 9). For comparison purposes, we also report results for the weakly magnetic analogue material LaOs 4 As 12 . Experimental DetailsSingle crystals of CeOs 4 As 12 and LaOs 4 As 12 w...

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“…eV[30]. The effective mass of electrons of order 0.55 no is an intermediate value for conduction and impurity band.…”

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confidence: 99%

PHYSICAL PROPERTIES OF METALLIC MAGNETIC COMPOUNDS : 5f-LOCALIZED APPROACHThe structure, magnetic and related properties of the semimetallic, semiconducting and ionic compounds of actinides

Suski

1979

J. Phys. Colloques

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R6sumC.-Dans cette revue nous discutons la structure, les proprietks magnetiques et celles likes au magnetisme des composCs semim6talliques, semiconducteurs ou ioniques des actinides qui ont kt6 etudikes pendant Ies deux dernibres annkes. Nous insistons tout particulibrement sur les systbmes cubiques de structure du type Th3P4. Jusqu'h prksent, ce groupe de composes a reGu moins d'attention que par exemple les composes du type NaCl, h cause de leur degre plus grand de complexitk. On a aussi present6 les resultats obtenus pour les systbmes ternaires d'uranium de structure tktragonale, ainsi que pour quelques composks ioniques d'uranium (IV) et (v). On a fait enfin une courte revue des recherches recentes sur la diffusion inelastique des neutrons.

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Preparation and semiconducting properties of Th3As4

Cited by 24 publications

References 10 publications

Key properties of inorganic thermoelectric materials—tables (version 1)

Key properties of inorganic thermoelectric materials—tables (version 1)

The filled skutterudite CeOs ₄ As ₁₂ : A hybridization gap semiconductor

PHYSICAL PROPERTIES OF METALLIC MAGNETIC COMPOUNDS : 5f-LOCALIZED APPROACHThe structure, magnetic and related properties of the semimetallic, semiconducting and ionic compounds of actinides

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Preparation and semiconducting properties of Th3As4

Cited by 24 publications

References 10 publications

Key properties of inorganic thermoelectric materials—tables (version 1)

Key properties of inorganic thermoelectric materials—tables (version 1)

The filled skutterudite CeOs 4 As 12 : A hybridization gap semiconductor

PHYSICAL PROPERTIES OF METALLIC MAGNETIC COMPOUNDS : 5f-LOCALIZED APPROACHThe structure, magnetic and related properties of the semimetallic, semiconducting and ionic compounds of actinides

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The filled skutterudite CeOs ₄ As ₁₂ : A hybridization gap semiconductor