Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells

Alamé, Sabine; Navarro-Quezada, A.; Skuridina, D.; Reich, Christoph; Henning, Dimitri; Frentrup, Martin; Wernicke, Tim; Koslow, Ingrid; Kneissl, Michael; Esser, N.; Vogt, Patrick

doi:10.1016/j.mssp.2016.02.013

Cited by 14 publications

(7 citation statements)

References 22 publications

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“…24,25 Other members of the so-called X-enes family (borophene, germanene, stanene, phosphorene, arsenene, antimonene, bismuthene, and tellurene) are also of particular interest for their excellent physical, chemical, electronic, and optical properties. 26 The evidence that bulk group-III nitrides are among the most important materials for solid-state lighting, as witnessed by the Nobel prize awarded in 2014 to Akasaki, Amano, and Nakamura, stimulated in the last years several theoretical 27,28 and experimental [29][30][31] studies on 2D honeycomb III-N sheets. From the experimental side, their growth is very challenging because, similar to the case of silicene, no simple route to mechanical or chemical exfoliation can be used, due to their 3-D wurtzite structures (only BN crystallizes in the hexagonal layered form in bulk).…”

Section: Introductionmentioning

confidence: 99%

Strain-induced effects on the electronic properties of 2D materials

Postorino

Grassano

D’Alessandro

et al. 2020

Nanomaterials and Nanotechnology

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Thanks to the ultrahigh flexibility of 2D materials and to their extreme sensitivity to applied strain, there is currently a strong interest in studying and understanding how their electronic properties can be modulated by applying a uniform or nonuniform strain. In this work, using density functional theory (DFT) calculations, we discuss how uniform biaxial strain affects the electronic properties, such as ionization potential, electron affinity, electronic gap, and work function, of different classes of 2D materials from X-enes to nitrides and transition metal dichalcogenides. The analysis of the states in terms of atomic orbitals allows to explain the observed trends and to highlight similarities and differences among the various materials. Moreover, the role of many-body effects on the predicted electronic properties is discussed in one of the studied systems. We show that the trends with strain, calculated at the GW level of approximation, are qualitatively similar to the DFT ones solely when there is no change in the character of the valence and conduction states near the gap.

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Section: Introductionmentioning

confidence: 99%

Strain-induced effects on the electronic properties of 2D materials

Postorino

Grassano

D’Alessandro

et al. 2020

Nanomaterials and Nanotechnology

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“…The principal aim of this work is to show a new PL band of the cubic films at 2.70 ± 0.05 eV when compared with the hexagonal phase emissions, and the possible relation between the band and the structural properties of the material. The emission at 2.7 eV (λ = 460 nm) corresponds to a light blue color, which is precisely the emission of InGaN Light-Emitting Diodes [27,28]. This fact could conduce, after some engineering process, to the preparation of cubic ZnO-based blue emission devices.…”

Section: Introductionmentioning

confidence: 99%

Luminescent Properties of (004) Highly Oriented Cubic Zinc Blende ZnO Thin Films

et al. 2019

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Photoluminescence properties of cubic zinc blende ZnO thin films grown on glass substrates prepared by the spray pyrolysis method are discussed. X-ray diffraction spectra show the crystalline wurtzite with preferential growth in the (002) orientation and a metastable cubic zinc blende phase highly oriented in the (004) direction. Raman measurements support the ZnO cubic modification growth of the films. Photoluminescence (PL) spectra of zinc blende films are characterized by a new PL band centerd at 2.70 eV, the blue emission, in addition there are two principal bands that are also found in hexagonal ZnO films with the peak positions at 2.83 eV and 2.35 eV. The origin of the 2.70 eV band can be attributed to transitions from Zn-interstitial to Zn-vacancies. It is also important to mention that the PL intensity of the 2.35 eV band of the zinc blende thin films is relatively higher than in the band present in hexagonal ZnO films, which means that zinc blende films have more oxygen vacancies, as was corroborated by means of the energy dispersion spectroscopy (EDS) measurements. PL spectra at 77 °K were measured and the 2.70 eV band was confirmed for the zinc blende films. Some PL bands of cubic films also appeared for the hexagonal phase, which is due, to a certain extent, to the similar ions stacking of both wurtzite and zinc blende symmetries.

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“…Only monolayer BN can, in principle, be easily prepared by exfoliation from hexagonal bulk BN 6 . Promising experimental attempts to obtain 2D AlN and GaN recently appeared [7][8][9] . Measurements of GaN sheets encapsulated in graphene seem to suggest a fundamental optical gap of about 5 eV 10 .…”

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confidence: 99%

Giant excitonic absorption and emission in two-dimensional group-III nitrides

Prete¹,

Grassano²,

Pulci³

et al. 2020

Sci Rep

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Absorption and emission of pristine-like semiconducting monolayers of Bn, Aln, Gan, and inn are systematically studied by ab-initio methods. We calculate the absorption spectra for in-plane and out-of-plane light polarization including quasiparticle and excitonic effects. Chemical trends with the cation of the absorption edge and the exciton binding are discussed in terms of the band structures. exciton binding energies and localization radii are explained within the Rytova-Keldysh model for excitons in two dimensions. The strong excitonic effects are due to the interplay of low dimensionality, confinement effects, and reduced screening. We find exciton radiative lifetimes ranging from tenths of picoseconds (BN) to tenths of nanoseconds (InN) at room temperature, thus making 2D nitrides, especially inn, promising materials for light-emitting diodes and high-performance solar cells.

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Preparation and structure of ultra-thin GaN (0001) layers on In0.11Ga0.89N-single quantum wells

Cited by 14 publications

References 22 publications

Strain-induced effects on the electronic properties of 2D materials

Strain-induced effects on the electronic properties of 2D materials

Luminescent Properties of (004) Highly Oriented Cubic Zinc Blende ZnO Thin Films

Giant excitonic absorption and emission in two-dimensional group-III nitrides

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