2022
DOI: 10.1007/s11665-021-06521-6
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Preparation and Thermoelectric Properties of Type-VIII Single-Crystalline SmxBa8−xGa16Sn30 Clathrate

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Cited by 3 publications
(3 citation statements)
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“…The Ga/Ge ratio affects the Seebeck coefficient: unfavourable values for x = 12-16 and favourable values for x = 17-20 [103]. For example, Saramat et al (2006) reported that, at 900K, the ZT value of Ba 8 Ga 16 Ge 30 produced by the Czochralski technique is 1.35 and reached approximately 1.63 at 1100 k. Recently, Shen et al (2022) synthesised Type-VIII single-crystalline Sm 0.75 Ba 6.25 Ga 16 Sn 30 Clathrate using the Sn-flux method. The result showed a high Seebeck coefficient and electrical conductivity at 300-600 K, leading to a ZT peak 1.31 at 457 K [104].…”
Section: Clathratesmentioning
confidence: 99%
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“…The Ga/Ge ratio affects the Seebeck coefficient: unfavourable values for x = 12-16 and favourable values for x = 17-20 [103]. For example, Saramat et al (2006) reported that, at 900K, the ZT value of Ba 8 Ga 16 Ge 30 produced by the Czochralski technique is 1.35 and reached approximately 1.63 at 1100 k. Recently, Shen et al (2022) synthesised Type-VIII single-crystalline Sm 0.75 Ba 6.25 Ga 16 Sn 30 Clathrate using the Sn-flux method. The result showed a high Seebeck coefficient and electrical conductivity at 300-600 K, leading to a ZT peak 1.31 at 457 K [104].…”
Section: Clathratesmentioning
confidence: 99%
“…For example, Saramat et al (2006) reported that, at 900K, the ZT value of Ba 8 Ga 16 Ge 30 produced by the Czochralski technique is 1.35 and reached approximately 1.63 at 1100 k. Recently, Shen et al (2022) synthesised Type-VIII single-crystalline Sm 0.75 Ba 6.25 Ga 16 Sn 30 Clathrate using the Sn-flux method. The result showed a high Seebeck coefficient and electrical conductivity at 300-600 K, leading to a ZT peak 1.31 at 457 K [104]. Detailed information about the clathrate and its application in TE can be found in [105].…”
Section: Clathratesmentioning
confidence: 99%
“…As a result, scattering through local alloy disorder was reduced, and mobility increased [164]. [165]. Doping can introduce the positive impact on the electrical charge carrier concentration but can suppress the scattering effects from ionized impurities.…”
Section: Phonon-glass Electron Crystal (Pgec)mentioning
confidence: 99%