Preparation and Thermoelectric Properties of n-Type Bi2Te2.7Se0.3:D
                m

Lee, Go-Eun; Eum, A-Young; Song, Kexing; Kim, Il-Ho; Lim, Young Soo; Seo, Won‐Seon; Choi, Byeong-Jun; Hwang, Chang‐Won

doi:10.1007/s11664-014-3485-7

Cited by 9 publications

(9 citation statements)

References 26 publications

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“…In particular, arc melting yields samples with around −50 μV/K [36]. For Se-doped samples, similar Seebeck coefficients at 300 K close to −150 μV K −1 are reported [41]; much better values are reported by Soni et al [39] after tuning the Se composition, where the optimal thermoelectric performance has been found in Bi 2 Te 2.7 Se 0.3 nanocomposite, which exhibits its best Seebeck coefficient value of −259 μV/K at room temperature.…”

Section: Resultsmentioning

confidence: 87%

“…We find the charge carrier density at 300 K to be −3.1∙10 19 cm −3 , slightly higher than pure Bi 2 Te 3 [36, 42]. The mobility is quite low at 300 K, determined using μ H = R H * σ , which results in 10.1 cm 2 V −1 s −1 [35, 41]. Bi 2 Te 3 -type compounds are extremely anisotropic, where electron mobility is heavily influenced by the grain orientation [43].…”

Section: Resultsmentioning

confidence: 96%

“…Soni et al [39] found similar effects on carrier scattering, doping, and electrical conductivity for a Bi 2 Te 2.2 Se 0.8 nanocomposite, with both metallic and semiconductor behavior throughout their measurement range with values around 75 μΩ at room temperature. By encapsulating melting and hot pressing, this value is reduced down to 12–20 μΩ m [41], while after SPS treatments, values close to 15 μΩ m were reported [35].

Fig.…”

Section: Resultsmentioning

confidence: 99%

“…Within the Bi 2 Te 3 -Bi 2 Se 3 system, for solid solutions prepared by encapsulated melting and hot pressing, typical thermal conductivity values of 1.04 W m −1 K −1 at 323 K have been reported [41]; for samples prepared by large-scale zone melting κ = 1.2 W m −1 K −1 at 323 K [44]. In the case of nanocomposite materials prepared by the polyol method and SPS, much lower values of thermal conductivity are found such as 0.9 W m −1 K −1 at 300 K for Bi 2 Te 2.2 Se 0.8 nanocomposites and exceptionally 0.7 W m −1 K −1 at 300 K for Bi 2 Te 2.7 Se 0.3 nanocomposites [39], but these fabrication techniques are, by far, more complex and time-consuming than the arc melting presented here.…”

Section: Resultsmentioning

confidence: 99%

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Influence of Doping and Nanostructuration on n-Type Bi2(Te0.8Se0.2)3 Alloys Synthesized by Arc Melting

et al. 2017

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In competitive thermoelectric devices for energy conversion and generation, high-efficiency materials of both n-type and p-type are required. For this, Bi2Te3-based alloys have the best thermoelectric properties in room temperature applications. Partial replacement of tellurium by selenium is expected to introduce new donor states in the band gap, which would alter electrical conductivity and thermopower. We report on the preparation of n-type Bi2(Te1-xSex)3 solid solutions by a straightforward arc-melting technique, yielding nanostructured polycrystalline pellets. X-ray and neutron powder diffraction was used to assess Se inclusion, also indicating that the interactions between quintuple layers constituting this material are weakened upon Se doping, while the covalency of intralayer bonds is augmented. Moreover, scanning electron microscopy shows large surfaces perpendicular to the c crystallographic axis assembled as stacked sheets. Grain boundaries related to this 2D nanostructuration affect the thermal conductivity reducing it below 0.8 Wm−1K−1 at room temperature. Furthermore, Se doping increases the absolute Seebeck coefficient up to −140 μV K−1 at 400 K, which is also beneficial for improved thermoelectric efficiency.

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Section: Resultsmentioning

confidence: 87%

Section: Resultsmentioning

confidence: 96%

Fig.…”

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Influence of Doping and Nanostructuration on n-Type Bi2(Te0.8Se0.2)3 Alloys Synthesized by Arc Melting

et al. 2017

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“…Slow decrease in S is observed between 300 and 550 K, where average value is −75 μV K −1 . There is small improvement in thermopower regarding pure Bi 2 Te 3 samples, but it is still low in contrast to other Bi 2 (Te 1−x Se x ) 3 alloys, where values of −190 μV K −1 are reported [46] or even −259 μV K −1 at room temperature in samples with optimized composition [47]. Hall concentration of charge carriers is determined as 3.1 × 10 19 cm −3 at 300 K (inset in Figure 13a), which is somewhat higher than in pure Bi 2 Te 3 [20,35], as a result of donor feature of Bi 2 (Te 1−x Se x ) 3 alloys.…”

Section: Bi 2 Tementioning

confidence: 71%

Nanostructured State-of-the-Art Thermoelectric Materials Prepared by Straight-Forward Arc-Melting Method

Serrano‐Sánchez¹,

Gharsallah²,

Bermúdez³

et al. 2016

Thermoelectrics for Power Generation - A Look at Trends in the Technology

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Thermoelectric materials constitute an alternative to harvest sustainable energy from waste heat. Among the most commonly utilized thermoelectric materials, we can mention Bi 2 Te 3 (hole and electron conductivity type), PbTe and recently reported SnSe intermetallic alloys. We review recent results showing that all of them can be readily prepared in nanostructured form by arc-melting synthesis, yielding mechanically robust pellets of highly oriented polycrystals. These materials have been characterized by neutron powder diffraction (NPD), scanning electron microscopy (SEM) and electronic and thermal transport measurements. Analysis of NPD patterns demonstrates near-perfect stoichiometry of above-mentioned alloys and fair amount of anharmonicity of chemical bonds. SEM analysis shows stacking of nanosized sheets, each of them presumably single-crystalline, with large surfaces parallel to layered slabs. This nanostructuration affects notably thermoelectric properties, involving many surface boundaries (interfaces), which are responsible for large phonon scattering factors, yielding low thermal conductivity. Additionally, we describe homemade apparatus developed for the simultaneous measurement of Seebeck coefficient and electric conductivity at elevated temperatures.

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Thermoelectric Enhancement of Different Kinds of Metal Chalcogenides

Han

Sun

et al. 2016

Advanced Energy Materials

173

114

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Due to the urgency of our energy and environmental issues, a variety of cost-effective and pollution-free technologies have attracted considerable attention, among which thermoelectric technology has made enormous progress. Substantial numbers of new thermoelectric materials are created with high figure of merit (ZT) by using advanced nanoscience and nanotechnology. This is especially true in the case of metalchalcogenide-based materials, which possess both relatively high ZT and low cost among all the different kinds of thermoelectric materials. Here, comprehensive coverage of recent advances in metal chalcogenides and their correlated thermoelectric enhancement mechanisms are provided. Several new strategies are summarized with the hope that they can inspire further enhancement of performance, both in metal chalcogenides and in other materials. Disciplines Engineering | Physical Sciences and Mathematics Publication DetailsHan, C., Sun, Q., Li, Z. & Dou, S. X. (2016) Several new strategies are summarized with the hope that they can inspire further enhancement of performance, both in metal chalcogenides and in other materials.2

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Preparation and Thermoelectric Properties of n-Type Bi2Te2.7Se0.3:D m

Cited by 9 publications

References 26 publications

Influence of Doping and Nanostructuration on n-Type Bi2(Te0.8Se0.2)3 Alloys Synthesized by Arc Melting

Influence of Doping and Nanostructuration on n-Type Bi2(Te0.8Se0.2)3 Alloys Synthesized by Arc Melting

Nanostructured State-of-the-Art Thermoelectric Materials Prepared by Straight-Forward Arc-Melting Method

Thermoelectric Enhancement of Different Kinds of Metal Chalcogenides

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