Preparation and transport properties of AgSbTe2 by high-pressure and high-temperature

Composition-dependent electrical transport properties of Pb50Te52 doped with PbI2 prepared by HPHT

“…The synthetic temperature was set at 1200 K to keep the sample melting adequately, followed by quenching with the rate of 50 K/s. Referring to our previous work [16,17,24], the synthesis time was selected as 15 min in this work. The synthetic pressure was set at 3.5 GPa, at which the samples gained the ideal properties.…”

“…The electrical resistivity was measured under argon atmosphere by standard dc four-probe configuration. The Seebeck coefficient S was determined from thermoelectromotive force E 0 given by the temperature difference within 3-5 K between the two ends of the sample with a home-made computer assistant device [24]. Five samples were made at the same synthetic conditions and composition x in the present work.…”

On the Way to the Creation of Thermoelectric Converters on the Basis of Nanoobjects Such as Quantum Dots, Nanowires and Superlattices

“…Матеріал відомий досить давно як тер-моелектричний матеріал р-типу [78][79][80], який де-монструє дві різні особливості: дуже низьку тепло-провідність ґратки ( ) і відносно високий коефіцієнт Зеєбека ( ) [80,81]. можна вважати твердим роз-чином , а однофазний можна отримати тільки у певному композицій-ному діапазоні з відношенням, яке < 1 [82,83].…”

High Power Factor of HPHT-Sintered GeTe-AgSbTe2 Alloys

“…Under increasing pressure, S at room temperature for p-type lead chalcogenides first decreases then becomes negative and reaches a maximum absolute value at around 3 GPa to 4 GPa. [27][28][29] AgSbTe 2 synthesized from the elements under high-pressure, high-temperature (HPHT) conditions 30,31 but measured at ambient pressure revealed decreasing S and increasing r with increasing synthesis pressure. 30,31 In contrast, we have reported that HPHT sintering (6.5 GPa and 900°C) of conventionally synthesized p-type PbTe (slightly Pb deficient) yields an n-type material with increased |S|, but also lower r and slightly higher j when measured at ambient pressure.…”

“…[27][28][29] AgSbTe 2 synthesized from the elements under high-pressure, high-temperature (HPHT) conditions 30,31 but measured at ambient pressure revealed decreasing S and increasing r with increasing synthesis pressure. 30,31 In contrast, we have reported that HPHT sintering (6.5 GPa and 900°C) of conventionally synthesized p-type PbTe (slightly Pb deficient) yields an n-type material with increased |S|, but also lower r and slightly higher j when measured at ambient pressure. 32 We have also reported on the enhanced thermoelectric properties of HPHT-sintered n-type PbTe, 33 and p-type Pb 0.5 Sn 0.5 Te.…”