Preparation by tape casting and hot pressing of copper carbon composites films

Geffroy, Pierre-Marie; Chartier, Thierry; Silvain, Jean François

doi:10.1016/j.jeurceramsoc.2006.04.054

Cited by 38 publications

(28 citation statements)

References 11 publications

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“…These combined trends lead to a constant increase in electrical power density (W cm À2 ), junction temperature ( C), and heat flux density (W cm À2 ) in electronic packages. [1] Current heat flux levels in power electronic packages can typically reach 100 W cm À2 , leading to junction temperatures located between 125 and 175 C. [1,6,7] Heat flux levels are expected to increase in the near-future with the spreading of high-power chips made of wide band-gap compound semiconductor materials such as silicon carbide (SiC) and gallium nitride (GaN). With such materials, power densities and junction temperatures as high as 150-200 W cm À2 and 300-350 C, respectively, have to be considered.…”

Section: à2mentioning

confidence: 99%

“…With such materials, power densities and junction temperatures as high as 150-200 W cm À2 and 300-350 C, respectively, have to be considered. [1,7] Consequently, the constant increase in heat flux that has to be dealt with for safe operation has made thermal management of electronic packages a key aspect of the development of smaller and more efficient power devices.…”

Section: à2mentioning

confidence: 99%

“…Al and Cu are two widely used heat dissipation materials because they exhibit high thermal conductivities (237 and 404 W m À1 K À1 , respectively [1,7] ). However, they present a large CTE mismatch with Si (20.4 Â 10 À6 C À1 between Al and Si, and 14.4 Â 10 À6 C À1 between Cu and Si, respectively).…”

Section: à2mentioning

confidence: 99%

“…Materials with high thermal conductivity and low CTE, such as aluminum/ silicon carbide (Al/SiC) composites, copper/molybdenum (Cu/ Mo), and copper/tungsten (Cu/W) alloys, offer CTEs compatible with silicon but insufficient thermal conductivity to provide efficient cooling to high power modules. [7,8] Diamond (D) has exceptional thermal properties with the highest thermal conductivity at room temperature of all known materials (λ ¼ 800-2000 W m À1 K À1 for Ib diamond). [1] However, its very low CTE (α ¼ 1.0 Â 10 À6 C…”

Section: à2mentioning

confidence: 99%

“…It indeed offers a low boiling point (T b ¼ 74.8 C) and a low dielectric constant that is beneficial to the wettability of the powders by the solvent. [7,10] A dispersant agent was added to the mixture in order to uniformly disperse the powders by developing repulsive forces between particles using electrosteric mechanisms. The dispersant agent used is a phosphate ester (CP213, Cerampilot, France).…”

Section: Chemical Treatmentmentioning

confidence: 99%

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Formation of Cu Nanodots on Diamond Surface to Improve Heat Transfer in Cu/D Composites

Guillemet

Heintz

Mortaigne³

et al. 2017

Adv Eng Mater

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Diamond-dispersed copper matrix (Cu/D) composite materials with different interfacial configurations are fabricated through powder metallurgy and their thermal performances are evaluated. An innovative solution to chemically bond copper (Cu) to diamond (D) has been investigated and compared to the traditional Cu/D bonding process involving carbide-forming additives such as boron (B) or chromium (Cr). The proposed solution consists of coating diamond reinforcements with Cu particles through a gas-solid nucleation and growth process. The Cu particle-coating acts as a chemical bonding agent at the Cu-D interface during hot pressing, leading to cohesive and thermally conductive Cu/D composites with no carbide-forming additives. Investigation of the microstructure of the Cu/D materials through scanning electron microscopy, transmission electron microscopy, and atomic force microscopy analyses is coupled with thermal performance evaluations through thermal diffusivity, dilatometry, and thermal cycling. Cu/D composites fabricated with 40 vol% of Cu-coated diamonds exhibit a thermal conductivity of 475 W m À1 K À1 and a thermal expansion coefficient of 12 Â 10 À6 C À1 . These promising thermal performances are superior to that of B-carbide-bonded Cu/D composites and similar to that of Cr-carbidebonded Cu/D composites fabricated in this study. Moreover, the Cu/D composites fabricated with Cu-coated diamonds exhibit higher thermal cycling resistance than carbide-bonded materials, which are affected by the brittleness of the carbide interphase upon repeated heating and cooling cycles. The as-developed materials can be applicable as heat spreaders for thermal management of power electronic packages. The copper-carbon chemical bonding solution proposed in this article may also be found interesting to other areas of electronic packaging, such as brazing solders, direct bonded copper substrates, and polymer coatings.

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Section: à2mentioning

confidence: 99%

Section: à2mentioning

confidence: 99%

Section: à2mentioning

confidence: 99%

Section: à2mentioning

confidence: 99%

Section: Chemical Treatmentmentioning

confidence: 99%

See 3 more Smart Citations

Formation of Cu Nanodots on Diamond Surface to Improve Heat Transfer in Cu/D Composites

Guillemet

Heintz

Mortaigne³

et al. 2017

Adv Eng Mater

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Thermal and Mechanical Properties of Copper–Carbon Composites in Electronic Packaging

Chandra

Silvain

Veillère

et al. 2012

Wiley Encyclopedia of Composites

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In the field of power electronics, thermal management of silicon chips plays a key role in our ability to increase their performance. It is necessary to dissipate the excess heat in order to prevent heating and consequent deterioration of silicon chips. In this article, we mainly focus on understanding the thermal management requirements of electronic packaging, the key scientific and technological issues, advances in terms of materials, design and processing, and future prospects of the field. In specific, we address how the competing physical, mechanical, and thermal requirements are optimized in heat sinks. Many of the issues addressed can be equally applicable to the design of any component with similar thermal and mechanical requirements including that of heat exchanger tubes. Although, in this article, we focus our attention on copper–carbon system, concepts presented here can be easily extended to other material systems.

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Physical Properties of Carbon Nanotube–Metal Nanocomposites

Tjong

2009

Carbon Nanotube Reinforced Composites

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Preparation by tape casting and hot pressing of copper carbon composites films

Cited by 38 publications

References 11 publications

Formation of Cu Nanodots on Diamond Surface to Improve Heat Transfer in Cu/D Composites

Formation of Cu Nanodots on Diamond Surface to Improve Heat Transfer in Cu/D Composites

Thermal and Mechanical Properties of Copper–Carbon Composites in Electronic Packaging

Physical Properties of Carbon Nanotube–Metal Nanocomposites

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