2010
DOI: 10.1016/j.jcis.2010.02.031
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Preparation, characterization and electrical properties of fluorine-doped tin dioxide nanocrystals

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Cited by 116 publications
(67 citation statements)
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“…Thus, it is essential to develop ways for controlling their structure and surface properties. There are several techniques that have been used to prepare FTO nanoparticles and thin films such as chemical vapor deposition [17], hydrothermal [18], solvothermal [19], spray pyrolysis [20] sol-gel [21] and rf-magnetron sputtering [10]. Among these techniques, the sol-gel method attracts most of the attention to the preparation of oxide nanoparticles, with a high quality, because of its several advantages, such as excellent homogeneity, ease of controlling the doping level, ability to coat large areas, complex shapes, and low-cost processing [22].…”
Section: Introductionmentioning
confidence: 99%
“…Thus, it is essential to develop ways for controlling their structure and surface properties. There are several techniques that have been used to prepare FTO nanoparticles and thin films such as chemical vapor deposition [17], hydrothermal [18], solvothermal [19], spray pyrolysis [20] sol-gel [21] and rf-magnetron sputtering [10]. Among these techniques, the sol-gel method attracts most of the attention to the preparation of oxide nanoparticles, with a high quality, because of its several advantages, such as excellent homogeneity, ease of controlling the doping level, ability to coat large areas, complex shapes, and low-cost processing [22].…”
Section: Introductionmentioning
confidence: 99%
“…Traditionally, tin oxide is doped to improve its expected properties by some dopants such as indium [17,18], antimony [19], palladium [20], cobalt [21] and fluorine. Depositing fluorine doped tin oxide thin films is usually done by spray pyrolysis [22], sputtering [23], sol-gel [24], and chemical vapor deposition (CVD), which in turn includes different variations such as low pressure CVD [25], plasma enhanced CVD [26], and atmospheric pressure chemical vapor deposition (AP-CVD) which is very productive and economic [27,28].…”
Section: Introductionmentioning
confidence: 99%
“…The first signal peak can be fitted into two peaks at 486.9 eV and 487.4 eV, which can be ascribed to Sn-O and Sn-F, respectively. The F 1s spectrum ( Figure S3) exhibits only one major peak, which is assigned to F-Sn bond [14,35]. As shown in Figure 5f, the characteristic peaks of Cu 2p at 932.5 eV and 952.6 eV correspond to the binding energy of Cu 2p3/2 and Cu 2p1/2, respectively.…”
Section: Crystal Structure and Compositionmentioning
confidence: 96%