Preparation of atomically flat surfaces on silicon carbide using hydrogen etching

Vidhya, R.; Brady, M.F.; Smith, Arthur R.; Feenstra, R. M.; Greve, David W.

doi:10.1007/s11664-998-0406-7

Cited by 198 publications

(75 citation statements)

References 9 publications

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“…Prior to annealing the morphology of the samples revealed a uniform step-terrace array, as previously described. 11 After annealing at about 1150°C, the overall step morphology is preserved (steps run approximately vertically in the image) although pits are seen to form in the areas between the steps, as shown in Fig. 3a.…”

Section: Resultsmentioning

confidence: 95%

Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)

Luxmi

Nie

Fisher

et al. 2008

Journal of Elec Materi

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The formation of epitaxial graphene on SiC(0001) surfaces is studied using atomic force microscopy, Auger electron spectroscopy, electron diffraction, Raman spectroscopy, and electrical measurements. Starting from hydrogenannealed surfaces, graphene formation by vacuum annealing is observed to begin at about 1150°C, with the overall step-terrace arrangement of the surface being preserved but with significant roughness (pit formation) on the terraces. At higher temperatures near 1250°C, the step morphology changes, with the terraces becoming more compact. At 1350°C and above, the surface morphology changes into relatively large flat terraces separated by step bunches. Features believed to arise from grain boundaries in the graphene are resolved on the terraces, as are fainter features attributed to atoms at the buried graphene/SiC interface.

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Section: Resultsmentioning

confidence: 95%

Temperature Dependence of Epitaxial Graphene Formation on SiC(0001)

Luxmi

Nie

Fisher

et al. 2008

Journal of Elec Materi

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“…The precise orientation of this small-scale structure of the step edges is difficult to discern from Fig. 1(d), but we believe the normal vectors to be [01 1 0] and [10 1 0] (±30° from [11 2 0]) since (i) this is a low energy step orientation for SiC steps [8], and (ii) the same step orientation is seen on GaN films grown on these substrates as shown below.…”

Section: Morphology Of H-etched Sic Substratesmentioning

confidence: 91%

“…1. Figures 1(a) and (b) review results for singular substrates [8]: The morphology of as-received substrates [ Fig. 1(a)] displays many polishing scratches.…”

Section: Morphology Of H-etched Sic Substratesmentioning

confidence: 99%

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Structural Properties of GaN Films Grown by Molecular Beam Epitaxy on Singular and Vicinal 6H-SiC(0001)

Lee

Feenstra

Shigiltchoff

et al. 2002

MRS Internet j. nitride semicond. res.

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Gallium nitride films are grown by plasma-assisted molecular beam epitaxy (MBE) on 6H-SiC(0001) substrates with no miscut and with 3.5° miscuts in both the [1 1 00] and [11 2 0] directions. The hydrogen-etched substrates display straight or chevron shaped steps, respectively, and the same morphology is observed on the GaN films. X-ray rocking curves display substantially reduced width for films on the vicinal substrates compared to singular substrates, for the same Ga/N flux ratio used during growth.

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“…Hydrogen etching is often used to remove such polishing damage [14] [15] [16] [17] [18]. This method involves heating the SiC surface to 1600°-1700°C in hydrogen.…”

Section: Hydrogen Etchingmentioning

confidence: 99%