Preparation of BiFeO3 films by wet chemical method and their characterization

Fruth, Victor; Tenea, Ecaterina; Gärtner, M.; Anastasescu, Mihai; Berger, Daniela; Ramer, Rodica; Zaharescu, Maria

doi:10.1016/j.jeurceramsoc.2006.04.135

Cited by 56 publications

(35 citation statements)

References 11 publications

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“…[49,95,[97][98][99][100] According to some authors, this bandgap is direct, [98,99] although other reports suggest also the presence of an indirect bandgap roughly 0.4-1.0 eV smaller than the direct one. [95,97] Ab initio calculations using screened exchange formalism show that bismuth ferrite is a semiconductor with a room-temperature gap of ca. 2.8 eV.…”

Section: Bandgap and MI Transitionmentioning

confidence: 97%

Physics and Applications of Bismuth Ferrite

2009

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BiFeO3 is perhaps the only material that is both magnetic and a strong ferroelectric at room temperature. As a result, it has had an impact on the field of multiferroics that is comparable to that of yttrium barium copper oxide (YBCO) on superconductors, with hundreds of publications devoted to it in the past few years. In this Review, we try to summarize both the basic physics and unresolved aspects of BiFeO3 (which are still being discovered with several new phase transitions reported in the past few months) and device applications, which center on spintronics and memory devices that can be addressed both electrically and magnetically.

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Section: Bandgap and MI Transitionmentioning

confidence: 97%

Physics and Applications of Bismuth Ferrite

2009

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“…The curves of both n and k show a rise at short wavelength. The absorption coefficients (a) of the sample can be directly obtained from k. We note that BFO material owns a direct gap [12][13][14], thus, the direct optical band gap E g for these films can be derived by the absorption coefficients shown in the inset (c) of Fig. 3.…”

Section: Methodsmentioning

confidence: 99%

Effect of Cr doping on the structure, optical and magnetic properties of multiferroic BiFeO3 thin films

Deng

Yang

et al. 2011

J Mater Sci: Mater Electron

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Multiferroic BiCr x Fe 1-x O 3 (BCFO) (0 B x B 0.12) thin films were fabricated on silicon substrates by sol-gel technique. The microstructure and properties of the films are characterized using X-ray diffraction, spectroscopic ellipsometry, micro-Raman spectrometry and a Modular Control system. The BCFO films are the rhombohedral structure with the Cr content up to 7%. Raman scattering spectra of the BCFO films demonstrate the transformation of structure with the Cr content exceeding 10%. The band gap of the BCFO films is from 2.53 to 2.82 eV with the Cr content being from 0 to 12%. The magnetization of the BCFO films is significantly enhanced with the increasing of the Cr content.

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“…Thus, the study on the optical properties of BiFeO 3 thin films is helpful to better understand the effect. Although some reports on the optical band gap of BiFeO 3 with different methods have been reported, such as the optical band gap of BiFeO 3 film was analyzed about 2.74 eV by molecular-beam epitaxy [5], 2.82 eV by wet chemical method [6], 2.80 eV by magnetron sputtering [7], and 2.70 eV by sol-gel process [8], most of those investigations were mainly focused on BiFeO 3 . As we known, proper ion substitution in BiFeO 3 is an efficient way to improve the optical properties.…”

Section: Introductionmentioning

confidence: 99%