Preparation of Br-terminated Si(100) and Si(111) surfaces and their use as atomic layer deposition resists
John R. Mason,
Andrew V. Teplyakov
Abstract:In area-selective processes, such as area-selective atomic layer deposition (AS-ALD), there is renewed interest in designing surface modification schemes allowing to tune the reactivity of the nongrowth (NG) substrates. Many efforts are directed toward small molecule inhibitors or atomic layers, which would modify selected surfaces to delay nucleation and provide NG properties in the target AS-ALD processes allowing for the manufacturing of smaller sized features than those produced with alternative approaches… Show more
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