Halide
perovskites represented by lead halide perovskites have
emerged as a class of star materials for optoelectronic applications,
particularly for solar cells, due to their superior optoelectronic
properties. Recently, nitride perovskites represented by LaWN3 have also emerged and attracted increasing attention from
the optoelectronic community. So the question is can nitride perovskites
provide the same superior optoelectronic properties as lead halide
perovskites? In this work, we theoretically evaluate the optoelectronic
properties of nitride perovskites, along with a comparison with lead
halide perovskites. We found that, unlike lead halide perovskites,
nitride perovskites generally exhibit large hole and electron effective
masses, not-too-high optical absorption coefficients, and dominant
defects with deep states in the bandgap. Our results suggest that
nitride perovskites can hardly provide the same superior optoelectronic
properties as lead halide perovskites and thus should not be considered
for high-performance optoelectronic applications such as solar cells.