Preparation of copper-incorporated mesoporous alumina abrasive and its CMP behavior on hard disk substrate

Lei, Hong; Jiang, Lei; Chen, Ruling

doi:10.1016/j.powtec.2011.12.022

Cited by 29 publications

(10 citation statements)

References 16 publications

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“…It is noted that CMP has encountered difficulties such as: While softening the workpiece surface, the polishing slurry also has a corrosive effect on the polishing pads, resulting in more frequent replacement of polishing pads and higher costs. During the polishing of metals, the workpiece is easily scratched by the abrasive grains due to the low hardness, making it difficult to achieve sub-nanometer roughness [ 91 , 92 , 93 ]. Trial and error are inevitable to find an appropriate slurry recipe when CMP is applied to new metal material.…”

Section: Chemical Modification Polishing Approachesmentioning

confidence: 99%

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Polishing Approaches at Atomic and Close-to-Atomic Scale

2023

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Roughness down to atomic and close-to-atomic scale is receiving an increasing attention in recent studies of manufacturing development, which can be realized by high-precision polishing processes. This review presents polishing approaches at atomic and close-to-atomic scale on planar and curved surfaces, including chemical mechanical polishing, plasma-assisted polishing, catalyst-referred etching, bonnet polishing, elastic emission machining, ion beam figuring, magnetorheological finishing, and fluid jet polishing. These polishing approaches are discussed in detail in terms of removal mechanisms, polishing systems, and industrial applications. The authors also offer perspectives for future studies to address existing and potential challenges and promote technological progress.

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Section: Chemical Modification Polishing Approachesmentioning

confidence: 99%

“…During the polishing of metals, the workpiece is easily scratched by the abrasive grains due to the low hardness, making it difficult to achieve sub-nanometer roughness [ 91 , 92 , 93 ]. Trial and error are inevitable to find an appropriate slurry recipe when CMP is applied to new metal material.…”

Section: Chemical Modification Polishing Approachesmentioning

confidence: 99%

Polishing Approaches at Atomic and Close-to-Atomic Scale

2023

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“…By contrast, the mesoporous structure exhibits a dual advantage, notably augmenting both polishing efficiency and surface quality, which has been confirmed in some reports. [16][17][18][19][20] Ryu et al discovered that the mesoporous structure of wrinkled silica nanoparticles increased the MRR by 89.3% and reduced root-mean-square (RMS) roughness from 0.226 nm to 0.164 nm compared to silica nanospheres. 16 Chen et al utilized the mesoporous structure to obtain superior polishing efficiency increasing from 21.1% to 163.9% and polishing quality improving from 32.2% to 60% in RMS relative to solid silica particles (sSiO 2 ).…”

Section: Introductionmentioning

confidence: 99%

“…17,18 Lei et al prepared mesoporous structure alumina abrasives and obtained a higher MRR from 1.75 mg min −1 to 4.25 mg min −1 and reduced surface roughness by 12.2% com-pared with solid alumina abrasives. 19 From the perspective of microstructure, mesoporous structure can be considered a normal abrasive with holes on its surface, akin to nanoscale cutting edges that encompass minute gaps. 21 This intriguing attribute leads to the presence of what can be termed nanoscale gap multi-edges (NGMEs), which wield a dual advantage by positively influencing both surface roughness and the MRR in CMP.…”

Section: Introductionmentioning

confidence: 99%

A novel atomic removal model for chemical mechanical polishing using developed mesoporous shell/core abrasives based on molecular dynamics

Liu,

Zhang,

Feng

et al. 2024

Nanoscale

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“…However, the decomposition energy of H 2 O 2 is 54 kcal/mol, which causes it to decompose too slowly at room temperature to be completely effective. In our previous studies, the use of Cu (Ⅱ) [14] or potassium peroxydisulfate-sodium hydrogensulfite (K 2 S 2 O 8 -NaHSO 3 ) as catalyzers [15] …”

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confidence: 99%

Abrasive-free polishing of hard disk substrate with H2O2-C4H10O2-Na2S2O5 slurry

Zhang

Lei

2013

Friction

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Abstract:The effect of tert-butyl hydroperoxide-sodium pyrosulfite ((CH 3 ) 3 COOH-Na 2 S 2 O 5 ) as an initiator system in H 2 O 2 -based slurry was investigated for the abrasive-free polishing (AFP) of a hard disk substrate. The polishing results show that the H 2 O 2 -C 4 H 10 O 2 -Na 2 S 2 O 5 slurry exhibits a material removal rate (MRR) that is nearly 5 times higher than that of the H 2 O 2 slurry in the AFP of the hard disk substrate. In addition, the surface polished by the slurry containing the initiator exhibits a lower surface roughness and has fewer nano-asperity peaks than that of the H 2 O 2 slurry. Further, we investigate the polishing mechanism of H 2 O 2 -C 4 H 10 O 2 -Na 2 S 2 O 5 slurry. Electron spin-resonance spectroscopy and auger electron spectrometer analyses show that the oxidizing ability of the H 2 O 2 -C 4 H 10 O 2 -Na 2 S 2 O 5 slurry is much greater than that of the H 2 O 2 slurry. The results of potentiodynamic polarization measurements show that the hard disk substrate in the H 2 O 2 -C 4 H 10 O 2 -Na 2 S 2 O 5 slurry can be rapidly etched, and electrochemical impedance spectroscopy analysis indicates that the oxide film of the hard disk substrate formed in the H 2 O 2 -C 4 H 10 O 2 -Na 2 S 2 O 5 slurry may be loose, and can be removed easily during polishing. The better oxidizing and etching ability of H 2 O 2 -C 4 H 10 O 2 -Na 2 S 2 O 5 slurry leads to a higher MRR in AFP for hard disk substrates.

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Preparation of copper-incorporated mesoporous alumina abrasive and its CMP behavior on hard disk substrate

Cited by 29 publications

References 16 publications

Polishing Approaches at Atomic and Close-to-Atomic Scale

Polishing Approaches at Atomic and Close-to-Atomic Scale

A novel atomic removal model for chemical mechanical polishing using developed mesoporous shell/core abrasives based on molecular dynamics

Abrasive-free polishing of hard disk substrate with H2O2-C4H10O2-Na2S2O5 slurry

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