Preparation of crystalline carbon nitride films on silicon substrate by chemical vapor deposition

Woo, H.K.; Zhang, Yafei; Lee, Shuit‐Tong; Lee, Chun‐Sing; Lam, Y. W.; Wong, Kin Yau

doi:10.1016/s0925-9635(96)00615-2

Cited by 30 publications

(4 citation statements)

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“…Therefore, we studied a novel kind of heterojuction composed of g-C 3 N 4 and tz-BiVO 4 containing a certain amount of Gd. There are several methods for preparing g-C 3 N 4 , including CVD, PVD, several methods based on them (plasma-CVD, HF-CVD) and pyrolyzing precursors. − Among them, pyrolysis precursor is the most economical one without a complex route. On the basis of many reports, melamine is recognized to be a stable, low-cost, and easily operated precursor. , During the pyrolysis process, it will generate some intermediate product-melem (C 6 N 7 (NH 2 ) 3 ) which can also be further polymerized during the postheat treatment .…”

Section: Introductionmentioning

confidence: 99%

Preparation of Self-Assembled Spherical g-C₃N₄/tz-Bi_0.92Gd_0.08VO₄ Heterojunctions and Their Mineralization Properties

Zhao

Tan

Huang

et al. 2015

ACS Appl. Mater. Interfaces

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A novel kind of spherical g-C3N4/tz-Bi0.92Gd0.08VO4 heterojuctions are prepared via a simple microwave hydrothermal method. The sphere self-assembled mechanism and the heterojunction photocatalytic mechanism are mainly studied in this article. The results show that the added g-C3N4 sheets first anchor on ms-BiVO4 surfaces and then polymerize to form the coating layers, generating steric effect which is competing with Gd(3+) induction effect to affect the crystal transformation (from ms-BiVO4 to tz-BiVO4) and its growth during those processes. Afterward, independent coated structures are further polymerized and assembled into g-C3N4/tz-Bi0.92Gd0.08VO4 spheres. Because ECB (-0.95 V) of g-C3N4 is more negative than ECB (-0.05 V) of tz-BiVO4, the photoelectrons of g-C3N4 can be transferred into tz-BiVO4 surfaces through the heterojunction structure, so as to promote the separation rate of electron-hole pairs. In general, the adding of g-C3N4 can introduce hydroxyl groups to catch the photoholes and can inject electrons to react with dissolved oxygen to boost the production of active groups. Depending on such an orderly cooperation, g-C3N4/tz-Bi0.92Gd0.08VO4 heterojunction catalysts exhibit high and stable mineralization properties.

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Section: Introductionmentioning

confidence: 99%

Preparation of Self-Assembled Spherical g-C₃N₄/tz-Bi_0.92Gd_0.08VO₄ Heterojunctions and Their Mineralization Properties

Zhao

Tan

Huang

et al. 2015

ACS Appl. Mater. Interfaces

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“…Because sp 2 and sp 3 carbon nitride peaks are difficult to distinguish, the peak at 286.1 eV is identified as mixed sp 2 and sp 3 C-N bonding. The third peak at 287.4-287.5 eV is assigned to C O 12 and nitrile, 12 whereas the last peak at 288.8-289.1 eV is assigned to O C-O 12 and N-C O 12 bonds.…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 99%

“…Active oxygen species, i.e. both sp 2 and sp 3 bonds, etchse the film surface during growth. Thus, inevitably, there is a slight decrease in sp 3 content.…”

Section: X-ray Photoelectron Spectroscopymentioning

confidence: 99%

“…1 These studies have motivated efforts on the growth of carbon nitride films, including reactive sputtering, laser ablation, arc plasma jet chemical vapour deposition (CVD), plasma decomposition, ion beam deposition and hot filament CVD. 2 In this paper we investigate the effect of hydrogen addition to the growth of carbon nitride by plasma-enhanced CVD (PECVD) using a C 2 H 4 -NH 3 -H 2 mixture. Post-growth rapid thermal annealing (RTA) also has been carried out to increase crystallinity and to study its effect on sp 3 content.…”

Section: Introductionmentioning

confidence: 99%

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Crystalline carbon nitride deposition by r.f.-PECVD using a C2H4-NH3-H2 source gas mixture

Lim

Wee

Lin

et al. 1999

Surf. Interface Anal.

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Carbon nitride films have been deposited on Si(100) substrates by r.f. plasma‐enhanced chemical vapour deposition (r.f.‐PECVD) using an ethylene–ammonia–hydrogen (C2H4–NH3–H2) source gas mixture followed by rapid thermal annealing (RTA) at 1000 °C for 2 min. The films were characterized in terms of chemical bonding, crystallinity, N/C ratio, sp3 fraction and surface topography by diffused reflectance infrared spectroscopy (DRIFT), x‐ray diffraction (XRD), x‐ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). The DRIFT data revealed that, after RTA, N–H, N–C–H, C–H, CN, C–O and CN bonds were reduced but C–N, diamond C–C and N–C=O bonds were formed. The XRD data show growth of crystalline carbon nitride as well as amorphous SiC. The XPS data indicate that the sp3 fraction on the film surface is maximum at 100 sccm hydrogen flow rate. The AFM data show carbon nitride growth in clusters of sizes 60–70 nm. The DRIFT and XPS data were correlated. Copyright © 1999 John Wiley & Sons, Ltd.

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Nitrides

Roberts¹,

Covington²

2005

Kirk-Othmer Encyclopedia of Chemical Technology

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Nitrides may be classified as being ionic or salt‐like, metallic, nonmetallic (diamond‐like) or volatile. The properties of transition‐metal metallic nitrides and the diamond‐like nonmetallic nitrides are described. Additionally, sulfur and phosphorus form polymeric nitride species. Transition‐metal binary nitrides, made on a small scale, are used for high strength and hardness primarily as refractory coatings. Boron, aluminum, and silicon nitrides find use as refractories, ablative materials, abrasives, and coatings. The combination of high thermal conductivity, high electrical resistivity and linear thermal expansion coefficient makes aluminum nitride a sufficient ceramic material for electronic applications. Several powder‐specific synthesis methods for aluminum nitride are described and the effects of oxygen and impurity contamination are mentioned. Lithium nitride finds application in batteries and catalysts. Gallium and indium nitrides are used in such optoelectronic devices as light‐emitting diodes. The material and electrical properties of gallium nitride (GaN) position it as a prime candidate for high power microwave applications. GaN has shown extensive potential in the microelectronics environment for high electron mobility transistors. The manufacture and processing of nitride coatings by case hardening is presented as well as the processing of the structurally important silicon nitride. A brief summary of the optical and electronic properties, including optical adsorption and field emission, of carbon nitride are also presented. Plasma enhanced and hot filament chemical vapor deposition techniques are highlighted as two of the most current preparation methods used to obtain carbon nitride films.

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Preparation of crystalline carbon nitride films on silicon substrate by chemical vapor deposition

Cited by 30 publications

References 10 publications

Preparation of Self-Assembled Spherical g-C₃N₄/tz-Bi_0.92Gd_0.08VO₄ Heterojunctions and Their Mineralization Properties

Preparation of Self-Assembled Spherical g-C₃N₄/tz-Bi_0.92Gd_0.08VO₄ Heterojunctions and Their Mineralization Properties

Crystalline carbon nitride deposition by r.f.-PECVD using a C2H4-NH3-H2 source gas mixture

Nitrides

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Preparation of crystalline carbon nitride films on silicon substrate by chemical vapor deposition

Cited by 30 publications

References 10 publications

Preparation of Self-Assembled Spherical g-C3N4/tz-Bi0.92Gd0.08VO4 Heterojunctions and Their Mineralization Properties

Preparation of Self-Assembled Spherical g-C3N4/tz-Bi0.92Gd0.08VO4 Heterojunctions and Their Mineralization Properties

Crystalline carbon nitride deposition by r.f.-PECVD using a C2H4-NH3-H2 source gas mixture

Nitrides

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Preparation of Self-Assembled Spherical g-C₃N₄/tz-Bi_0.92Gd_0.08VO₄ Heterojunctions and Their Mineralization Properties

Preparation of Self-Assembled Spherical g-C₃N₄/tz-Bi_0.92Gd_0.08VO₄ Heterojunctions and Their Mineralization Properties