1967
DOI: 10.1002/pssb.19670210203
|View full text |Cite
|
Sign up to set email alerts
|

Preparation of Cu2Se Single Crystals and Investigation of their Electrical Properties

Abstract: d study is made of the electrical conductivity, u, the thermo e.m.f., a, and the Hall constant, R, in single crystals of Cu,Se. The temperature dependence of these phenomena in the range 22 to 650°C is also investigated. From the temperature dependence of u a value of 1.2 eV is found for the activation energy, AE, in the inherent region, whereas the value obtained from the optical absorption edge is 1.3 eV.n0JIyseHHbIe MOHOKPHCTanJIbI CU,Se, UCCJIeJlOBaHbI 3JIeKTpOIIpOBOJlHOCTH -U , TePMOBACa, 3@@eIFT XOJIJIa … Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
15
0

Year Published

1971
1971
2022
2022

Publication Types

Select...
10

Relationship

0
10

Authors

Journals

citations
Cited by 38 publications
(17 citation statements)
references
References 0 publications
1
15
0
Order By: Relevance
“…While Sharma et al [10,19] and Padam [11] has obtained a direct band gap of around 1.2 eV. The cuprous selenide single crystal however, gives absorption edge at 1.2 eV [12]. The wide variation in band gaps are thought to be due to sharp cut off of the wavelength with spectral transmittance instead of slow increase [10], wide range of stiochiometric deviation, the presence of large number of dislocations, changes in barrier height due to variation in grain size in polycrystalline films and quantum size effect [13].…”
Section: Introductionmentioning
confidence: 94%
“…While Sharma et al [10,19] and Padam [11] has obtained a direct band gap of around 1.2 eV. The cuprous selenide single crystal however, gives absorption edge at 1.2 eV [12]. The wide variation in band gaps are thought to be due to sharp cut off of the wavelength with spectral transmittance instead of slow increase [10], wide range of stiochiometric deviation, the presence of large number of dislocations, changes in barrier height due to variation in grain size in polycrystalline films and quantum size effect [13].…”
Section: Introductionmentioning
confidence: 94%
“…Some fundamental limitations related to the physics of noble metals would be overcome by changing the free-carrier density of the semiconductor material 54 through carefully designing the chemical synthesis technology to control heavily doped, nonstoichiometric ratios in the semiconductor NP composites. Although many extensive studies of the metallic behavior of heavily doped semiconductors in bulk materials and films were performed almost 40 years ago, 55 the development of ultra-small semiconductor NPs with controllable free-carrier densities for tuning their plasmonic absorption peak position is still in its infancy and remains a great challenge.…”
Section: Chalcogenide-based Nanomaterialsmentioning
confidence: 99%
“…sulphide, selenide and telluride. In 1967, Abdullaev et al described the preparation of Cu2Se single crystals [39]. They reported the degeneration of the hole gas in these crystals that seemed to be due to structural imperfections of Cu2--xSe introduced during the chemical synthesis, as confirmed by X--ray analysis.…”
Section: Bulk Chalcogenide Semiconductorsmentioning
confidence: 99%