Preparation of Cu2ZnSnS4 thin films by hybrid sputtering

Tanaka, Tooru; Nagatomo, Takeshi; Kawasaki, Daisuke; Nishio, Mitsuhiro; Guo, Qi; Wakahara, Akihiro; Yoshida, Akira; Ogawa, Hiroshi

doi:10.1016/j.jpcs.2005.09.037

Cited by 334 publications

(158 citation statements)

References 7 publications

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“…6), we extracted the relevant transport parameters by fitting the electrical conductivity data with Eqs. (3) 34 for polycrystalline CZTS. In the case of CIGS, [35][36][37] and considering polycrystalline films for which the solar cells showed efficiencies close to the highest values reported, the mobilities are of a few cm 2 V −1 s −1 .…”

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confidence: 99%

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

et al. 2011

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In this work, we investigated structural, morphological, electrical, and optical properties from a set of Cu 2 ZnSnS 4 thin films grown by sulfurization of metallic precursors deposited on soda lime glass substrates coated with or without molybdenum. X-ray diffraction and Raman spectroscopy measurements revealed the formation of single-phase Cu 2 ZnSnS 4 thin films. A good crystallinity and grain compactness of the film was found by scanning electron microscopy. The grown films are poor in copper and rich in zinc, which is a composition close to that of the Cu 2 ZnSnS 4 solar cells with best reported efficiency. Electrical conductivity and Hall effect measurements showed a high doping level and a strong compensation. The temperature dependence of the free hole concentration showed that the films are nondegenerate. Photoluminescence spectroscopy showed an asymmetric broadband emission. The experimental behavior with increasing excitation power or temperature cannot be explained by donor-acceptor pair transitions. A model of radiative recombination of an electron with a hole bound to an acceptor level, broadened by potential fluctuations of the valence-band edge, was proposed. An ionization energy for the acceptor level in the range 29-40 meV was estimated, and a value of 172 ± 2 meV was obtained for the potential fluctuation in the valence-band edge.

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Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

et al. 2011

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“…2,3 Replacing In and Ga in CIGS with earth-abundant Zn and Sn, we can obtain Cu 2 ZnSn(S x Se 1−x ) 4 (CZTSSe) which has drawn increased attention as an alternative absorber layer. [4][5][6][7][8][9] CZTSSe has optimal band gap (1.0-1.5 eV, depending on the S, Se compositions), 10 and also high absorption coefficient (∼10 4 cm −1 ) that make it suitable for solar cell application. 11 Nevertheless, the highest achieved efficiency, so far, using CZTSSe is 12.6%, 12 which is only about half of the similar structured CIGS-based solar cell.…”

Section: Introductionmentioning

confidence: 99%

“…A comparative study with focusing on carrier recombination properties in Cu 2 ZnSn(S,Se) 4 (CZTSSe) and the CuInGaSe 2 (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed.…”

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A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

et al. 2016

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A comparative study with focusing on carrier recombination properties in Cu2ZnSn(S,Se)4 (CZTSSe) and the CuInGaSe2 (CIGS) solar cells has been carried out. For this purpose, electroluminescence (EL) and also bias-dependent time resolved photoluminescence (TRPL) using femtosecond (fs) laser source were performed. For the similar forward current density, the EL-intensity of the CZTSSe sample was obtained significantly lower than that of the CIGS sample. Primarily, it can be attributed to the existence of excess amount of non-radiative recombination center in the CZTSSe, and/or CZTSSe/CdS interface comparing to that of CIGS sample. In case of CIGS sample, TRPL decay time was found to increase with the application of forward-bias. This can be attributed to the reduced charge separation rate resulting from the reduced electric-field at the junction. However, in CZTSSe sample, TRPL decay time has been found almost independent under the forward and reverse-bias conditions. This phenomenon indicates that the charge recombination rate strongly dominates over the charge separation rate across the junction of the CZTSSe sample. Finally, temperature dependent VOC suggests that interface related recombination in the CZTSSe solar cell structure might be one of the major factors that affect EL-intensity and also, TRPL decay curves.

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“…The natural and synthetic CZTS differ slightly in their lattice parameters. A broad range of techniques have been explored to deposit CZTS films: sulfurization of sputtered [3][4][5] or evaporated [6] stacked films, spray method [7,8], sol-gel method [9], hydrazine deposition [10], and electrode deposition [11]. Their properties have been extensively studied both experimentally [12][13][14][15][16][17][18][19] and theoretically [20][21][22][23].…”

Section: Introductionmentioning

confidence: 99%

Electronic and optical properties of substitutional V, Cr and Ir impurities in Cu2ZnSnS4

Tablero

2014

Solar Energy Materials and Solar Cells

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The substitution of cation atoms by V, Cr and Ir in the natural and synthetic quaternary Cu2ZnSnS4 semiconductor is analyzed using first-principles methods. In most of the substitutions, the electronic structure of these modified CZTS is characterized for intermediate bands with different occupation and position within of the energy band gap. A study of the symmetry and composition of these intermediate bands is carried out for all substitutions.These bands permit additional photon absorption and emission channels depending on their occupation. The optical properties are obtained and analyzed. The absorption coefficients are split into contributions from the different absorption channels and from the inter-and intra-atomic components. The sub bandgap transitions are significant in many cases because the anion states contribute to the valence, conduction and intermediates bands. These properties could therefore be used for novel optoelectronic devices.

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Preparation of Cu2ZnSnS4 thin films by hybrid sputtering

Cited by 334 publications

References 7 publications

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

Photoluminescence and electrical study of fluctuating potentials in Cu2ZnSnS4-based thin films

A comparative study on charge carrier recombination across the junction region of Cu2ZnSn(S,Se)4 and Cu(In,Ga)Se2 thin film solar cells

Electronic and optical properties of substitutional V, Cr and Ir impurities in Cu2ZnSnS4

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