Preparation of Cu3N/MoS2 Heterojunction through Magnetron Sputtering and Investigation of Its Structure and Optical Performance

Zhu, Liwen; Cao, Xiu; Gong, Chunhui; Jiang, Aihua; Cheng, Yong; Xiao, Jianrong

doi:10.3390/ma13081873

Cited by 20 publications

(5 citation statements)

References 35 publications

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“…In addition, thanks to its good electrical properties and the ease with which it can be fabricated, the use of this material as a solar absorber could help avoid the hightemperature steps involved in the fabrication of solar-grade silicon. Furthermore, thanks to bipolar doping [17], this material can be profitably used in rectifying heterojunctions [18][19][20] as well as homojunctions [8][9][10][11][12][13][14][15][16][17][18][19][20][21], and in solar cells [8,17,22].…”

Section: Introductionmentioning

confidence: 99%

Effect of Argon on the Properties of Copper Nitride Fabricated by Magnetron Sputtering for the Next Generation of Solar Absorbers

et al. 2022

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Copper nitride, a metastable semiconductor material with high stability at room temperature, is attracting considerable attention as a potential next-generation earth-abundant thin-film solar absorber. Moreover, its non-toxicity makes it an interesting eco-friendly material. In this work, copper nitride films were fabricated using reactive radio frequency (RF) magnetron sputtering at room temperature, 50 W of RF power, and partial nitrogen pressures of 0.8 and 1.0 on glass and silicon substrates. The role of argon in both the microstructure and the optoelectronic properties of the films was investigated with the aim of achieving a low-cost absorber material with suitable properties to replace the conventional silicon in solar cells. The results showed a change in the preferential orientation from (100) to (111) planes when argon was introduced in the sputtering process. Additionally, no structural changes were observed in the films deposited in a pure nitrogen environment. Fourier transform infrared (FTIR) spectroscopy measurements confirmed the presence of Cu–N bonds, regardless of the gas environment used, and XPS indicated that the material was mainly N-rich. Finally, optical properties such as band gap energy and refractive index were assessed to establish the capability of this material as a solar absorber. The direct and indirect band gap energies were evaluated and found to be in the range of 1.70–1.90 eV and 1.05−1.65 eV, respectively, highlighting a slight blue shift when the films were deposited in the mixed gaseous environment as the total pressure increased.

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Section: Introductionmentioning

confidence: 99%

Effect of Argon on the Properties of Copper Nitride Fabricated by Magnetron Sputtering for the Next Generation of Solar Absorbers

et al. 2022

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“…Liwen et al reported a Cu 3 N/MoS 2 heterostructure with a clear surface without any cracks and uniform grains at the surface. 35 A type-II heterojunction is formed between a layer of Cu 3 N and multilayer MoS 2 . After the formation of the heterojunction, the electrons move from the interface of MoS 2 to Cu 3 N because of a higher Fermi level of Cu 3 N than the MoS 2 .…”

Section: Growth and Integration Of Heterostructuresmentioning

confidence: 99%

Mixed-dimensional van der Waals heterostructure enabled gas sensors: fundamentals and applications

Goel,

Utkarsha,

Kushwaha

et al. 2024

J. Mater. Chem. A

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“…It is very necessary to study the optical properties of heterojunction, because optical properties play an important role in photoelectric detection equipment and electronic equipment [39,40]. It is proved that the heterojunction formed by coupling two different semiconductor materials will improve the optical properties of semiconductor materials [41,42]. Therefore, we studied and compared the optical properties of ZnO/WSe 2 heterostructures before and after vacancy generation, including dielectric function and optical absorption coefficient, as shown in Figure 7.…”

Section: Optical Propertiesmentioning

confidence: 99%

Effects of Vacancy Defects on Electrical and Optical Properties of ZnO/WSe2 Heterostructure: First-Principles Study

Yong

Wang²,

Deng³

et al. 2022

Metals

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In this work, based on the first principles calculation of density functional theory (DFT), we studied the band structure changes of monolayer ZnO and ZnO/WSe2 before and after vacancy generation, and systematically studied the vacancy formation energy, band structure, density of states, electronic density difference and optical properties of ZnO/WSe2 heterostructure before and after vacancy generation. The results show that the band structures of ZnO, WSe2, and ZnO/WSe2 heterostructure are changed after the formation of Zn, O, W, and Se vacancies. The bandgap of the ZnO/WSe2 heterostructure can be effectively controlled, the transition from direct to indirect bandgap semiconductor will occur, and the heterostructure will show metallic properties. The optical properties of heterostructure have also changed significantly, and the absorption capacity of heterostructure to infrared light has been greatly increased with red shift and blue shift respectively. The generation of vacancy changes the electrical and optical properties of ZnO/WSe2 heterostructure, which provides a feasible strategy for adjusting the photoelectric properties of two-dimensional optoelectronic nano devices and has good potential and broad application prospects.

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Preparation of Cu3N/MoS2 Heterojunction through Magnetron Sputtering and Investigation of Its Structure and Optical Performance

Cited by 20 publications

References 35 publications

Effect of Argon on the Properties of Copper Nitride Fabricated by Magnetron Sputtering for the Next Generation of Solar Absorbers

Effect of Argon on the Properties of Copper Nitride Fabricated by Magnetron Sputtering for the Next Generation of Solar Absorbers

Mixed-dimensional van der Waals heterostructure enabled gas sensors: fundamentals and applications

Effects of Vacancy Defects on Electrical and Optical Properties of ZnO/WSe2 Heterostructure: First-Principles Study

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