Abstract:Silicon carbide (SiC) was prepared by carbothermal reduction of a crystalline-layered sodium silicate (δ-Na 2 Si 2 O 5)/carbon nanocomposite (LCN), which contained a stacked carbon film embedded with cobalt between the silicate layers. Subsequent sintering of this mixture for 3 h at 1000-1350°C resulted in the formation of graphitic carbon and SiC. Meanwhile, sintering without a cobalt catalyst resulted in the formation of graphitic carbon, regardless of the temperature. The use of a cobalt catalyst allowed th… Show more
Iron(iii) oxide (Fe2O3) and boron nitride (BN)-doped reduced graphene oxide (rGO) nanosheets were prepared successfully using a surfactant-free hydrothermal method.
Silicon carbide porous flakes are produced during the electrochemical etching (ECE) of n-doped 4H-SiC wafers. The differences in porosity between the Si-face and C-face allow for the adsorption of various dyes.
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