2019
DOI: 10.1016/j.ceramint.2019.01.158
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Preparation of flower-shaped silica abrasives by double system template method and its effect on polishing performance of sapphire wafers

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Cited by 31 publications
(15 citation statements)
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“…7 In particular, abrasives in CMP play an important role in both fundamental mechanical force and bonding force on account of their advantages for material removal, and thus polishing performance is significantly affected by the morphology, structure, size and chemical composition of abrasives. 8,9 For decades, a series of research studies have been conducted to investigate the influence of abrasive morphology 10,11 and the micro-topological structure [12][13][14][15] on polishing performance. Liang et al synthesized necklace-shaped silica particles which exhibited a superior material removal rate (MRR) from 13.4 nm min −1 to 22.2 nm min −1 compared with conventional silica particles.…”
Section: Introductionmentioning
confidence: 99%
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“…7 In particular, abrasives in CMP play an important role in both fundamental mechanical force and bonding force on account of their advantages for material removal, and thus polishing performance is significantly affected by the morphology, structure, size and chemical composition of abrasives. 8,9 For decades, a series of research studies have been conducted to investigate the influence of abrasive morphology 10,11 and the micro-topological structure [12][13][14][15] on polishing performance. Liang et al synthesized necklace-shaped silica particles which exhibited a superior material removal rate (MRR) from 13.4 nm min −1 to 22.2 nm min −1 compared with conventional silica particles.…”
Section: Introductionmentioning
confidence: 99%
“…Liang et al synthesized necklace-shaped silica particles which exhibited a superior material removal rate (MRR) from 13.4 nm min −1 to 22.2 nm min −1 compared with conventional silica particles. 10 Compared with spherical particles, the MRR can be improved by 117.4% utilizing flower-shaped particles synthesized by Xu et al 11 While the above nanoparticles undeniably yield a substantial elevation in polishing efficiency, their discernible impact on enhancing the quality of the workpiece surface remains less pronounced. By contrast, the mesoporous structure exhibits a dual advantage, notably augmenting both polishing efficiency and surface quality, which has been confirmed in some reports.…”
Section: Introductionmentioning
confidence: 99%
“…The main planarization machining to realize the precision requirement for sapphire wafer is abrasive machining, especially by using abrasive particles with ne grain size [10,11]. A high concentration of slurry that contains relatively large abrasive particles of high hardness, such as diamond and alumina, has been widely used with a metal-resin platen in the conventional mechanical polishing [12,13].…”
Section: Introductionmentioning
confidence: 99%
“…To flatten the surface of sapphire without destroying the original properties, chemical mechanical polishing (CMP) is an appropriate choice [12]. CMP combines mechanical action of nano‐abrasives with chemical action of nano‐abrasives to deal with workpieces, thereby obtaining ultra‐flat and ultra‐smooth surface, which can achieve a dynamic balance that allows the plane of the sapphire substrate to reach atomic levels [4, 13]. It is the only technology that enables to provide a global flattening and is widely used in many fields [14].…”
Section: Introductionmentioning
confidence: 99%
“…1. Introduction: Sapphire (α-Al 2 O 3 ) is a kind of material that combines mechanical properties, optical properties, thermal properties, dielectric properties, physical properties and chemical properties [1][2][3][4][5]. As a result, a large number of sapphires are used in many fields such as industrial, communications, defence, as infrared window, semiconductor chip, fingerprint recognition and other materials [6].…”
mentioning
confidence: 99%