2003
DOI: 10.1143/jjap.42.l1
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Preparation of Freestanding GaN Wafers by Hydride Vapor Phase Epitaxy with Void-Assisted Separation

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Cited by 275 publications
(213 citation statements)
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“…Most of the GaN layers were grown on our standard 2-in.-diameter freestanding n-type (n = 1 × 10 18 cm −3 ) GaN substrates, produced by the void-assisted separation (VAS)-method, 16) unless otherwise noted. Results for the growth of a GaN template on a 6-in.…”
Section: Experimental Methodsmentioning
confidence: 99%
See 1 more Smart Citation
“…Most of the GaN layers were grown on our standard 2-in.-diameter freestanding n-type (n = 1 × 10 18 cm −3 ) GaN substrates, produced by the void-assisted separation (VAS)-method, 16) unless otherwise noted. Results for the growth of a GaN template on a 6-in.…”
Section: Experimental Methodsmentioning
confidence: 99%
“…The development of freestanding GaN substrates with a low threading dislocation density (TDD) by several groups, including ours, [16][17][18][19][20][21][22][23][24][25][26] has markedly changed this situation, and researches on GaN-based power devices using such substrates are now accelerating. 4,5,[27][28][29] Among the various methods for the growth of freestanding GaN substrates, hydride-vaporphase epitaxy (HVPE) is the most well established, and wafers with diameters of 2-in.…”
Section: Introductionmentioning
confidence: 99%
“…31 We then investigated the correlation between the structural properties and the optical properties. Optical properties of GaN porous samples were characterized by photoluminescence (PL) and photoreflectance measurements.…”
mentioning
confidence: 99%
“…This technique has been used in both metal organic chemical vapor deposition (MOCVD) [15,16] and HVPE [17]. Using this technique, it has been shown that for thicker GaN layers (> 600 µm) the bulk GaN layer is spontaneously separated from the substrate which means that many time-consuming or complicated process steps such as mechanical lapping of sapphire [18], chemical etching [19], laser lift-off [20], ELOG [21,22] and void assisted separation [23] can be avoided. Thus, there are several advantages using LT-GaN buffers since the number of process steps, and hence, the manufacturing cost can be reduced.…”
Section: Introductionmentioning
confidence: 99%