Preparation of Ga-doped ZnO films by pulsed dc magnetron sputtering with cylindrical rotating target for thin film solar cell applications

The effects of thickness on properties of B and Ga co-doped ZnO films grown by magnetron sputtering

“…Sputtering was performed at room temperature under an Ar atmosphere with an operating pressure of 6 m Torr. The RF power was fixed at 150 W. The BGZO films with various thicknesses (55, 105, 155, 210, 330 and 650 nm) were obtained by varying the deposition time (10,20,30,40, 60, 120 min). The thickness of the BGZO films was measured by a surface profilometer (KLA Tencor Alpha-step 500).…”

“…Although AZO films prepared by magnetron sputtering have relatively low resistivity, aluminum presents a very high reactivity leading to oxidation during the growth of the film [7][8][9]. As an alternative, Ga-doped ZnO (GZO) films has drawn attention due to its advantage over AZO including lower reactivity of Ga than Al and the Ga-O bond length of 1.92 Å, shorter than the Al-O bond length of 1.97 Å, enabling smaller lattice distortion on doping as compared to AZO [10][11][12]. B-doped ZnO (BZO), which is inducing improved density and mobility of carriers and the electrical conductivity of ZnO [13], also exhibits high transparency [14].…”

Effect of boron-doping and annealing on the structure, morphological and optical properties of ZnO films prepared by spray pyrolysis method

“…Furthermore, B-doping promotes n-type character and improves the electrical conductivity of metal oxides. Recent studies demonstrate good film transparency and enhanced thermal stability of ZnO films with boron inclusion [20][21][22][23].…”