2019
DOI: 10.1088/1674-1056/28/1/018504
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Preparation of Ga 2 O 3 thin film solar-blind photodetectors based on mixed-phase structure by pulsed laser deposition

Abstract: Gallium oxide (Ga 2 O 3 ) thin films were deposited on a-Al 2 O 3 (11 20) substrates by pulsed laser deposition (PLD) with different oxygen pressures at 650 • C. By reducing the oxygen pressure, mixed-phase Ga 2 O 3 films with α and β phases can be obtained, and on the basis of this, mixed-phase Ga 2 O 3 thin film solar-blind photodetectors (SBPDs) were prepared. Comparing the responsivities of the mixed-phase Ga 2 O 3 SBPDs and the single β -Ga 2 O 3 SBPDs at a bias voltage of 25 V, it is found that the form… Show more

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Cited by 22 publications
(12 citation statements)
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“…The first decay time constant ( 1 ) was found to be 0.86 s, which probably relates to the recombination of the electrons formed in the conduction band with the holes from recombination centers present in the material, or from a bandto-band annihilation process [25]. The second time constant (τ d2 ) was found to be 10.17 s, which is a much slower component and can be attributed to deep traps [25] that generates a persistent photocurrent effect [26]. Both rise and decay times do not change with the applied voltage at the third electrode.…”
Section: B Results Of Coupled Schottky Diode Experimentsmentioning
confidence: 99%
“…The first decay time constant ( 1 ) was found to be 0.86 s, which probably relates to the recombination of the electrons formed in the conduction band with the holes from recombination centers present in the material, or from a bandto-band annihilation process [25]. The second time constant (τ d2 ) was found to be 10.17 s, which is a much slower component and can be attributed to deep traps [25] that generates a persistent photocurrent effect [26]. Both rise and decay times do not change with the applied voltage at the third electrode.…”
Section: B Results Of Coupled Schottky Diode Experimentsmentioning
confidence: 99%
“…Gallium oxide (Ga 2 O 3 ), on account of its direct ultra-wide bandgap (4.5-5.4 eV), high melting point, high dielectric constant, and ultrahigh breakdown field, has been used extensively in many fields, such as gas sensors, 1 high-power electronic devices, 2,3 photo-catalyst, 4 transparent conducting oxides, 5 metal-oxide-semiconductor field-effect transistors, 6 solar cells, 5,7 light-emitting diodes, 8,9 and solar-blind photodetectors. [10][11][12] Ga 2 O 3 owns five different crystal phases, and the orthorhombic β-Ga 2 O 3 structure is primarily due to its high thermal and chemical stability compared to its other polymorphs. There have been many epitaxial techniques to grow β-Ga 2 O 3 films such as molecular beam epitaxy, 13 spray pyrolysis, 14 sol-gel methods, 15 electron beam evaporation, 16 vacuum thermal evaporation, 17 radiofrequency (RF) magnetron sputtering, 18 plasma-enhanced atomic layer deposition (PEALD), 19 and pulsed laser deposition (PLD).…”
Section: Introductionmentioning
confidence: 99%
“…Recently, with the extensive exploration in power electronic devices and deep‐ultraviolet optoelectronic devices, the study of direct wide‐bandgap semiconductor materials has attracted more and more attention. Gallium oxide (Ga 2 O 3 ), on account of its direct ultra‐wide bandgap (4.5–5.4 eV), high melting point, high dielectric constant, and ultrahigh breakdown field, has been used extensively in many fields, such as gas sensors, 1 high‐power electronic devices, 2,3 photo‐catalyst, 4 transparent conducting oxides, 5 metal‐oxide‐semiconductor field‐effect transistors, 6 solar cells, 5,7 light‐emitting diodes, 8,9 and solar‐blind photodetectors 10–12 …”
Section: Introductionmentioning
confidence: 99%
“…For the Ga 2 O 3 material, its different polymorphs are usually reported, namely α, β, γ, δ, ε, and even amorphous phase [1,30]. Among said polymorphs, α/β mixed-phase Ga 2 O 3 including nanoarrays and thin film materials can be easily realized through the solution method and pulsed laser deposition method [17,[31][32][33]. So far, based on α/β mixed-phase Ga 2 O 3 , research has been conducted in photocatalysis [31], water splitting [32], and solar-blind ultraviolet photodetectors [17].…”
Section: Introductionmentioning
confidence: 99%