Preparation of GaN crystals by heating a Li₃N‐added Ga melt in Na vapor and their photoluminescence

Abstract

GaN crystals were prepared by heating a Ga melt with 1 at% Li 3 N against Ga at 750°C in Na vapor under N 2 pressures of 0.4-1.0 MPa. The GaN crystals grown at 1.0 MPa of N 2 were colorless and transparent prismatic, having a size of approximately 0.7 mm in length. A secondary ion mass spectrometry (SIMS) showed the contaminant of lithium in the obtained crystals. A large broad yellow band emission peak of 2.28 eV was observed at room temperature in the photoluminescence spectrum in addition to the near band emission peak of GaN at 3.39 eV and a small broad satellite emission at 3.24 eV.

Possibility of AlN Solution Growth Using Al and Li3N

“…These results suggest that NaN 3 is suitable as a nitrogen source for GaN solution growth. In fact, Yamada et al 13) succeeded in growing GaN using Ga melt and Na vapor under ambient N 2 , i.e., NaN x might be supplied on Ga melt. Moreover, they observed Li contamination when they added 1 at.…”

Possibility of AlN growth using Li–Al–N solvent

“…This implies that NaN 3 is suitable as a nitrogen source for GaN growth. In fact, Yamada et al [9] succeeded in growing GaN using Ga melt and Na vapor under ambient N 2 ; i.e., NaN x might be formed at the vapor/liquid interface region and supplied to Ga melt. Moreover, they observed Li contamination when they added 1 at% of Li 3 N to the Ga source [9].…”