2020
DOI: 10.3390/catal10030298
|View full text |Cite
|
Sign up to set email alerts
|

Preparation of Gd-Doped TiO2 Nanotube Arrays by Anodization Method and Its Photocatalytic Activity for Methyl Orange Degradation

Abstract: Gd-doped TiO2 nanotube arrays with 3D ordered and high specific surface (176 m2/g) area are successfully prepared on a Ti foil surface via an anodizing method. The characterizations of Gd-doped TiO2 nanotube arrays are carried out using X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscope (TEM), X-ray photoelectron spectroscopy (XPS), energy dispersive X-ray spectrometer (EDX), optical contact angle measurer, and ultraviolet (UV) fluorescence spectrophotometer, respecti… Show more

Help me understand this report

Search citation statements

Order By: Relevance

Paper Sections

Select...
3
1
1

Citation Types

1
7
0

Year Published

2020
2020
2024
2024

Publication Types

Select...
8

Relationship

0
8

Authors

Journals

citations
Cited by 28 publications
(8 citation statements)
references
References 44 publications
1
7
0
Order By: Relevance
“…The binding energy (BE) values (Table 2) corresponding to O 1 s (Figure 6A) confirm its 2 − state and meanwhile, the doublet and singlet that are respectively determined for Zr 3 d (Figure 6B) and Si 2 p (Figure 6C) confirms their 4 + state and further the reasonably high BE values noticed for these individual elements (Zr 4+ , Si 4+ and O 2− ) than the pristine oxides of ZrO 2 and SiO 2 establish the crystallization of ZrSiO 4 in the system 52,53 . The BE for Gd 4 d (Figure 6E) and P 2 p (Figure 6F) confirmed their oxidization states of 3 + and 5 + in both 10GPZS and 40GPZS systems 54–57 . The BE values of Ti 2 p 3/2 (Figure 6D) determined as 458.38 and 458.08 eV, respectively, for 10GPZS and 40GPZS are relatively reduced than the value reported for individual TiO 2.…”
Section: Resultssupporting
confidence: 55%
See 1 more Smart Citation
“…The binding energy (BE) values (Table 2) corresponding to O 1 s (Figure 6A) confirm its 2 − state and meanwhile, the doublet and singlet that are respectively determined for Zr 3 d (Figure 6B) and Si 2 p (Figure 6C) confirms their 4 + state and further the reasonably high BE values noticed for these individual elements (Zr 4+ , Si 4+ and O 2− ) than the pristine oxides of ZrO 2 and SiO 2 establish the crystallization of ZrSiO 4 in the system 52,53 . The BE for Gd 4 d (Figure 6E) and P 2 p (Figure 6F) confirmed their oxidization states of 3 + and 5 + in both 10GPZS and 40GPZS systems 54–57 . The BE values of Ti 2 p 3/2 (Figure 6D) determined as 458.38 and 458.08 eV, respectively, for 10GPZS and 40GPZS are relatively reduced than the value reported for individual TiO 2.…”
Section: Resultssupporting
confidence: 55%
“…52,53 The BE for Gd 4d (Figure 6E) and P 2p (Figure 6F) confirmed their oxidization states of 3 + and 5 + in both 10GPZS and 40GPZS systems. [54][55][56][57] The BE values of Ti 2p emerge from the excess Gd 3+ /P 5+ in the system leading to the crystallization of GdPO 4 as an individual component. 59 While, the extent of distribution density of Gd 3+ /PO 4 3À were found relatively minimum in 10GPZS against the high density noticed in 40GPZS.…”
Section: Xps Analysismentioning
confidence: 99%
“…Due to their wide band gaps, they are active only in the UV-light region, which is less than 5% of the solar light spectrum. In addition, the high recombination of electron-hole pairs of ZnO and TiO 2 leads to a low photon-to-electron conversion efficiency [ 18 , 19 , 20 , 21 , 22 ]. Therefore, improving photocatalytic activities via modification has become an important task.…”
Section: Introductionmentioning
confidence: 99%
“…For this reason, in the case of anatase TiO 2 with a bandgap of 3.2 eV, only a short wavelength no longer than 387.5 nm can be used for the reaction, which means that 95% of the sunlight incident on the earth cannot be used. Because these factors directly reduce the efficiency of the photocatalyst, various methods have been proposed to solve these issues, including elemental doping [ 16 , 17 , 18 , 19 , 20 , 21 , 22 , 23 ], dye sensitization [ 24 , 25 , 26 ], and microstructure control [ 27 , 28 , 29 ]. In the case of elemental doping, the dopant acts as a trap for excited electrons or holes, which delays the recombination of electron–hole pairs.…”
Section: Introductionmentioning
confidence: 99%