Preparation of
                    <i>N</i>
                    -Qubit GHZ State with a Hybrid Quantum System Based on Nitrogen-Vacancy Centers

Zhao, Yujing; Fang, Xiaowen; Zhou, Fangjun; Song, Ke-Hui

doi:10.1088/0256-307x/30/5/050304

Cited by 6 publications

(4 citation statements)

References 32 publications

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“…On the other hand, for the system with an NV center in diamond [35], since the room temperature long lifetime of the electronic spin state, has emerged as one of the most promising candidates for QIP and attracted great interests [36][37][38][39][40][41]. In the past few years, the approaches about QIP based on NV centers have been investigated theoretically [42][43][44][45][46][47][48] and experimentally [49][50][51]. Experiments show the zero phonon line emissions relevant to the emitted photons from the single NV center are significantly enhanced when an NV center coupled to a microcavity [51][52][53][54].…”

Section: Laser Physicsmentioning

confidence: 99%

Heralded teleportation of a controlled-NOT gate for nitrogen-vacancy centers coupled to a microtoroid resonator

Liu¹,

Cheng²,

Guo³

et al. 2019

Laser Phys.

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We propose a scheme for the teleportation of a controlled-NOT gate between two spatially separated nitrogen-vacancy (NV) centers resorting to linear optical, entangled NV pairs, photon measurement, and classical communication. The scheme exploits a heralded mechanism to avoid local computational errors, and the reflection coefficients only appear as a global coefficient, so that this scheme is intrinsically robust to experimental imperfections. We discuss the performance of the scheme with current experimental parameters, the results show the present scheme is efficient. The present scheme is promising for distributed quantum computing in the future.

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Section: Laser Physicsmentioning

confidence: 99%

Heralded teleportation of a controlled-NOT gate for nitrogen-vacancy centers coupled to a microtoroid resonator

Liu¹,

Cheng²,

Guo³

et al. 2019

Laser Phys.

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show abstract

“…The predominant techniques used to acquire superior, purer materials include mechanical stripping [52][53][54], epitaxial growth [55][56][57][58], chemical vapor deposition (CVD) [59,60], and liquid phase stripping [61]. Earlier reports documented recent research endeavors on layered GaS and other transition metal chalcogenides [62,63]. These investigations focused on many aspects, including the synthesis, isolation, characterization, and comparative analysis of these materials using optical microscopy on SiO 2 /Si substrates [26][27][28][29][30][31].…”

Section: Introductionmentioning

confidence: 99%

Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices

Zhou,

Zhao,

et al. 2023

Crystals

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Here, we report on using chemical vapor deposition to generate three kinds of gallium sulfide nanosheets, with thicknesses of approximately 10, 40, and 170 nm. Next, we performed Raman imaging analysis on these nanosheets to evaluate their properties. The 10 nm GaS nanosheets exhibited a nearly equal distribution of Raman imaging intensity, whereas the 40 and 170 nm GaS nanosheets exhibited an inclination toward the edges with higher Raman intensity. When the polarization of the laser was changed, the intensity of Raman imaging of the 10 nm thick GaS nanosheets remained consistent when illuminated with a 532 nm laser. Notably, a greater Raman intensity was discernible at the edges of the 40 and 170 nm GaS nanosheets. Three distinct GaS nanosheet devices with different film thicknesses were fabricated, and their photocurrents were recorded. The devices were exposed to light of 455 nm wavelength. The GaS nanosheet devices with film thicknesses of 40 and 170 nm exhibited a positive photoresponse even though the photocurrents were fairly low. In contrast, the GaS nanosheet device with a film thickness of 10 nm had a considerable current without light, even though it had a weak reaction to light. This study reveals the different spatial patterns of Raman imaging with GaS thickness, the wavelength of excitation light, and polarization. Remarkably, the I-V diagram revealed a higher dark-field current of 800 nA in the device with a GaS nanosheet thickness of approximately 10 nm, when using a voltage of 1.5 V and a laser of 445 nm wavelength. These findings are comparable with those theretical pretictions in the existing literature. In conclusion, the observation above could serve as a catalyst for future exploration into photocatalysis, electrochemical hydrogen production through water splitting, energy storage, nonlinear optics, gas sensing, and ultraviolet selective photodetectors of GaS nanosheet-based photodetectors.

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“…The conversion efficiency of Bi 2 Te 3 is low, but low power applications are gradually gaining the attention of researchers [21][22][23][24][25][26][27][28]. Currently, a wide range of demands have been developed for low-power generation and cooling technologies, the applications of which primarily operate in room-or low-temperature environments, such as micro-motor power systems, IoT wireless sensing modules, and wearable intelligent samples [29][30][31][32][33][34][35][36][37].…”

Section: Introductionmentioning

confidence: 99%

Green Synthesis and Morphological Evolution for Bi2Te3 Nanosystems via a PVP-Assisted Hydrothermal Method

Zhou,

Zhao

et al. 2023

Nanomaterials

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Bi2Te3 has been extensively used because of its excellent thermoelectric properties at room temperature. Here, 230–420 nm of Bi2Te3 hexagonal nanosheets has been successfully synthesized via a “green” method by using ethylene glycol solution and applying polyvinyl pyrrolidone (PVP) as a surfactant. In addition, factors influencing morphological evolution are discussed in detail in this study. Among these parameters, the reaction temperature, molar mass of NaOH, different surfactants, and reaction duration are considered as the most essential. The results show that the existence of PVP is vital to the formation of a plate-like morphology. The reaction temperature and alkaline surroundings played essential roles in the formation of Bi2Te3 single crystals. By spark plasma sintering, the Bi2Te3 hexagonal nanosheets were hot pressed into solid-state samples. We also studied the transport properties of solid-state samples. The electrical conductivity σ was 18.5 × 103 Sm−1 to 28.69 × 103 Sm−1, and the Seebeck coefficient S was −90.4 to −113.3 µVK−1 over a temperature range of 300–550 K. In conclusion, the observation above could serve as a catalyst for future exploration into photocatalysis, solar cells, nonlinear optics, thermoelectric generators, and ultraviolet selective photodetectors of Bi2Te3 nanosheet-based photodetectors.

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Preparation of N -Qubit GHZ State with a Hybrid Quantum System Based on Nitrogen-Vacancy Centers

Cited by 6 publications

References 32 publications

Heralded teleportation of a controlled-NOT gate for nitrogen-vacancy centers coupled to a microtoroid resonator

Heralded teleportation of a controlled-NOT gate for nitrogen-vacancy centers coupled to a microtoroid resonator

Thickness Nanoarchitectonics with Edge-Enhanced Raman, Polarization Raman, Optoelectronic Properties of GaS Nanosheets Devices

Green Synthesis and Morphological Evolution for Bi2Te3 Nanosystems via a PVP-Assisted Hydrothermal Method

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