Preparation of In2Se3 layers on InAs by heterovalent substitution

Bezryadin, N. N.; Budanov, A. V.; Tatokhin, E. A.; Agapov, B. L.; Linnik, A. V.

doi:10.1007/bf02758692

Cited by 6 publications

(3 citation statements)

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“…It is shown 6‐8 that wide‐gap semiconducting layers with thicknesses less than the Debye screening length can be used as subgate insulators in MIS‐type structures. For this purpose, the best candidates are compounds with stoichiometric vacant A 2 III B 3 VI type sites 9 . A 2 III B 3 VI type compounds are wide‐gap semiconductors with stoichiometric vacancies having low concentration of free and localized charged carriers.…”

Section: Introductionmentioning

confidence: 99%

“…Literature survey shows that a general study of the many such heterostructures has been made in the past Al ZnP 2 Si, Al In 2 S 3 InAs, Al In 2 Te 3 InAs, Al In 2x Ga 2(1Àx) Te 3 InAs, Al Ga 2 Se 3 GaAs, Al Ga 2 Se 3 Si. [7][8][9][10] Compound semiconductor Ga 2 Se 3 has been reported to find its application in fabrication of basic structure of metal-oxide-semiconductor field-effect transistors (MOSFET) and photovoltaic device 11 on Silicon. Some of the scientists have investigated the electrical and optical properties of Ga 2 Se 3 bulk crystals.…”

mentioning

confidence: 99%

“…For this purpose, the best candidates are compounds with stoichiometric vacant A 2 III B 3 VI type sites. 9 A 2 III B 3 VI type compounds are wide-gap semiconductors with stoichiometric vacancies having low concentration of free and localized charged carriers. These properties of the material provide the possibility of their usage as a subgate insulator in transistors having MIS structure and working in the external field conditions.…”

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confidence: 99%

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Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique

2022

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Many studies have been conducted in the past on compound semiconductor and wide-gap semiconductor for their possible usage in place of oxide in metal-oxidesemiconductor structures for high-speed metal-oxide-semiconductor field-effect transistors application. The best candidates for this purpose, however, are compounds with stoichiometric vacant A III 2 B VI 3 type sites. A III 2 B VI 3 type compounds are wide-gap semiconductors with stoichiometric vacancies and low concentration of free and localized charged carriers. It has that gate insulators can be constructed from wide-gap semiconductor layers with thicknesses smaller than the Debye Screening distance. These new MS'S (metal-Wide bandgap semiconductor-semiconductor) with a good lattice match have less of interface states thus giving better stability to the structure. The idea was to use these MS'S structures for photovoltaic applications with insignificant number of interface states. During literature survey, it was also found that Ga 2 Se 3 is the most prospective candidate for forming a heterostructure with Silicon because of its various properties. Structurally, perfect and homogeneous in thickness Ga 2 Se 3 layers have already been formed in quasi-closed volume by the Hot Wall technique by B. I. Sysoev in the Voronezh Technological Institute, Russia. However, this technology is not cost-efficient for photovoltaic applications, although it has the advantage of better control of Ga and Se components. Over the last few years, many attempts have been made using many other techniques such as Sol-gel technique, vapour phase epitaxy, molecular beam epitaxy, etc. for preparing the thin film of GaSe. The current work is an attempt to prepare the Ga 2 Se 3 film using the electron beam evaporation technique as it appeared to be much simpler. Film of thicknesses varying from 70 to 1000 Å were grown. The films have been studied for their morphology and properties for future use in photovoltaics and other device fabrication like IR detectors, etc. Various techniques were used to study the behavior of the films like XRD, SEM, and TEM.

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Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique

2022

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Kinetics of the initial stage in chalcogenide passivation of III–V semiconductors

Antyushin¹,

Budanov²,

Kukharenko³

et al. 2003

Semiconductors

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New forms of In2Se3 and Ga2Se3 prepared by reacting InAs and GaAs substrates with selenium

Budanov¹,

Tatokhin²,

Strygin³

et al. 2009

Inorg Mater

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Preparation of In2Se3 layers on InAs by heterovalent substitution

Cited by 6 publications

References 1 publication

Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique

Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique

Kinetics of the initial stage in chalcogenide passivation of III–V semiconductors

New forms of In2Se3 and Ga2Se3 prepared by reacting InAs and GaAs substrates with selenium

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Preparation of In2Se3 layers on InAs by heterovalent substitution

Cited by 6 publications

References 1 publication

Characterization of thin films of Ga2Se3 on Si fabricated using electron beam evaporation technique

Characterization of thin films of Ga2Se3 on Si fabricated using electron beam evaporation technique

Kinetics of the initial stage in chalcogenide passivation of III–V semiconductors

New forms of In2Se3 and Ga2Se3 prepared by reacting InAs and GaAs substrates with selenium

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Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique

Characterization of thin films of Ga₂Se₃ on Si fabricated using electron beam evaporation technique