Preparation of La-doped BiFeO3 thin films with Fe2+ ions on Si substrates

Abstract

La-doped BiFeO 3 thin films with Fe 2+ ions have been prepared on Pt/ TiO 2 / SiO 2 / Si substrates by pulsed laser deposition in order to enhance the ferroelectric and magnetic properties. The targets for the film deposition were synthesized using a rapid liquid phase sintering technique to ensure the low leakage. The dielectric properties at room temperature and above were investigated. It was observed that the La doping greatly enhances the ferroelectric polarization at room temperature by modifying the film structure from rhombohedral to monoclinic. The saturation magnetization was enhanced about two times due to the Fe 2+ ions in the thin films.

The influence of Ni-doping concentration on multiferroic behaviors in Bi4NdTi3FeO15 ceramics

“…The P-E loops exhibit leaky feature which is quite usual for SP multiferroic systems [9]. This leakage-related contribution was also confirmed in earlier reports [14,27,28] and seems to be intrinsic. As for undoped BTF [14] and Co-doped BTF [28] systems the positive-up-negativedown measurements confirmed that the ferroeletricity of BTF systems, although leaky, is intrinsic and natural and the leakage current does not play a big role in the ferroelectric behavior.…”

Magnetodielectric properties of Bi4NdTi3Fe0.7Co0.3O15 multiferroic system

“…The typical P-E loops although somewhat leaky have been observed. This leakage-related contribution was also confirmed in earlier reports [17,19,21] and seems to be intrinsic. However, as for BTF [19] and Bi 5 Ti 3 Fe 0.5 Co 0.5 O 15 [17] systems, the positive-up-negative-down measurements confirmed that the ferroelectricity of BTF systems, although leaky, is intrinsic and natural and the leakage current does not play a major role in the ferroelectric behavior.…”

Effects of substrate temperature on Bi0.8La0.2FeO3 thin films prepared by pulsed laser deposition

“…We chose BLF rather than BFO as our target of study because our major motivation is to prepare high-quality FEM thin films of both FE and FM orders at RT. A doping of 20% at La was proven to benefit most to the magnetic performance and ME coupling without scarifying much the electrical resistivity [6,22]. In addition, we also studied the effect of ambient pressure for deposition on the quality of BLF thin films, and found that the samples deposited at an ambient pressure as low as 1.0 Pa would have resulted in serious electrical leakage while no much change in the magnetic property was observed.…”