Preparation of large-size Y123 films on CeO2-buffered sapphire substrates by MOD using a low-cost vacuum technique

Abstract

High-J c YBa 2 Cu 3 O 7 (Y123) films with good homogeneity have been obtained on CeO 2 -buffered sapphire substrates by metal organic deposition (MOD) using a low-cost vacuum technique; only nitrogen gas and air instead of a high-purity gas mixture of argon and oxygen were supplied in the high-temperature heat treatment. A 2 cm · 12 cm rectangular Y123 film was prepared in a large-size tube furnace with uniform temperature zone. The total pressure and oxygen partial pressure in the furnace were controlled by the flow rates of nitrogen and air and by evacuation speed of a rotary pump. The apparent inductive-J c values, except those at a few positions near the film edges, were within 3.0 ± 0.3 MA/cm 2 , i.e., the fluctuation of J c was within ±10% of the average. Comparison of the spatial distributions of I c , film thickness and XRD intensity of Y123 suggests that the crystallinity of Y123 and J c values at local points are uniform over the film and the thickness distribution affects the local I c values, or apparent J c distribution.

High critical current solution derived YBa2Cu3O7 films grown on sapphire

“…These values are close to those achieved in YBCO films grown on epi-polished sapphire by vacuum deposition techniques or CSD [1,16,40,41], and by CSD on CZO/YSZ-single crystal substrates for similar thicknesses [21].…”

Preparation of YBa2Cu3O7-δ Patterned Film Using Metal Organic Deposition with Electron Beam Irradiation

“…8) In particular, high-T C superconductors have been investigated intensively for applications of currentlimiting devices, microwave filters, and high-quality epitaxial films of YBCO have been reported. [9][10][11][12][13][14] To extend the application range of this technique, microfabrication is required for the production of high-performance oxide devices.…”