2015
DOI: 10.1016/j.jpowsour.2014.09.164
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Preparation of lithium ion conductive Al-doped Li7La3Zr2O12 thin films by a sol–gel process

Abstract: Thin films of garnet-type Al-doped Li7La3Zr2O12 (LLZ) are prepared by the sol-gel process. Thin films are prepared on MgO substrates by a dip-coating process using a precursor sol from Zr-alkoxide and Li, La and Al nitrates. After the dip-coating, the dried films are calcined at 450°C to get precursor films. When the precursor films are heat-treated at 900°C in an alumina crucible, La2Zr2O7 is mainly obtained. With coexistence of Li2CO3 powders in the crucible during the heat-treatment at 900°C, thin film of p… Show more

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Cited by 87 publications
(85 citation statements)
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“…While undoped and amorphous LLZO thin films exhibit a lithium ion conductivity at room temperature (σ RT ) in the order of 10 −7 S · cm −1 , 6,7 Al-doped LLZO thin films show a lithium ion conductivity in the range of 10 −6 − 10 −5 S · cm −1 . [8][9][10][11] Only one study on cubic LLZO thin films, codoped with Al and Ta, 14 shows a conductivity value that is comparable to values reported for bulk ceramics. However, this value of 1.2 · 10 −4 S · cm −1 is only obtained from an in-plane measurement, 14 while the conductivity measured through the solid electrolyte film is as low as 2.0 · 10 −9 S · cm −1 .…”
mentioning
confidence: 69%
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“…While undoped and amorphous LLZO thin films exhibit a lithium ion conductivity at room temperature (σ RT ) in the order of 10 −7 S · cm −1 , 6,7 Al-doped LLZO thin films show a lithium ion conductivity in the range of 10 −6 − 10 −5 S · cm −1 . [8][9][10][11] Only one study on cubic LLZO thin films, codoped with Al and Ta, 14 shows a conductivity value that is comparable to values reported for bulk ceramics. However, this value of 1.2 · 10 −4 S · cm −1 is only obtained from an in-plane measurement, 14 while the conductivity measured through the solid electrolyte film is as low as 2.0 · 10 −9 S · cm −1 .…”
mentioning
confidence: 69%
“…16 The only modification made to the setup described in Loho et al 16 is that a porous stainless steel microsieve R200 (Tridelta Siperm GmbH) was used in front of the sample holder to achieve a more uniform gas flow and hence deposition. As precursor materials for the LLZO thin film deposition, 2,2,6,6-tetramethyl-3,5-heptanedionato lithium (LiC 11 4 , Sigma Aldrich, 98%) were premixed inside an Ar-filled glove box (MBraun GmbH) with O 2 -and H 2 Olevels <1 ppm. The Li: La: Zr molar ratio in the precursor mixture was set to 10.5: 3: 2.…”
Section: Methodsmentioning
confidence: 99%
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“…3 Finally, the thin film is deposited on the LiCoO 2 and the interface chemical reaction between LLZO and LiCoO 2 phases was studied using X-ray photoelectron spectroscopy and AC impedance spectroscopy.…”
Section: 10mentioning
confidence: 99%