Preparation of MoS₂ Nanopetals by RF Magnetron Sputtering and Electron-Beam Irradiation

Abstract

We demonstrate the preparation of molybdenum disulfide (MoS 2) nanopetals by RF magnetron sputtering and electronbeam irradiation (EBI). To investigate the structure and the surface morphology of MoS 2 films, atomic force microscopy (AFM), Raman spectroscopy, and scanning electron microscopy (SEM) were carried out. AFM results reveal that the surface roughness of MoS 2 increases with increase in deposition. After EBI process, the surface roughness decreases except for MoS 2 deposited for 5 min. In addition, EBI process increases the crystallinity of MoS 2 films, which is confirmed by Raman spectroscopy. The increase of crystallinity and the change of surface morphology are induced by inelastic scattering, which is the interaction between incident electrons and target material. SEM images display nanopetal structure of EBI-treated MoS 2 and we expect EBI-treated MoS 2 to be a potential candidate for applications such as gas sensors and hydrogen evolution reactions due to its vertically exposed edge sites.

High Temperature Carrier Scattering Mechanisms in Multilayer ReS2 Field-Effect Transistors

“…Thus far, among 2D layered materials such as molybdenum disulfide (MoS 2 ), black phosphorus (BP), and tungsten diselenide (WSe 2 ), rhenium disulfide (ReS 2 ) multilayer systems have garnered interest because of various distinctive features; i) extremely weak interlayer coupling, ii) an absence of the crossover from direct bandgap to indirect band gap with increasing thickness, iii) anisotropic carrier transport, iv) thermodynamic stability, and v) a distorted 1T ′ structure [4][5][6][7][8]. In particular, the decoupled van der Waals interaction with neighboring layers and thickness-independent band structure of ReS 2 leads to a high interlayer resistance (R IT ) compared to other 2D materials, indicating the increased importance of R IT effects on carrier transport inside a multilayer ReS 2 .…”

Oxidation Stability of Conductive Copper Paste Prepared through Electron Beam Irradiation

“…In the current work, we aimed to fabricate air-stable Cu nanoparticles for use as conductive metallic fillers through oxidation using electron beam (e-beam) irradiation, without employing any chemical reducing agent. Through controlling the absorbed e-beam dose [16], air-stable Cu nanoparticles with high stability were prepared for producing conductive ink pastes. The electrical conductivity of the conductive pastes with Cu nanoparticles prepared under different sintering conditions was studied for determining the relationship between the sheet resistance and Cu 2 O volume fraction depending on the heating temperature.…”