Preparation of Nanocrystalline Silicon Quantum Dots by Pulsed Plasma Processes with High Deposition Rates

Nishiguchi, Katsuhiko; Hara, Shohei; Amano, Tsuyoshi; Hatatani, Shigeo; Oda, Shunri

doi:10.1557/proc-571-43

Cited by 19 publications

(13 citation statements)

References 11 publications

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“…Nanocrystalline silicon (nc-Si) is a promising material from a viewpoint of the integration with the silicon ULSI technology. We have succeeded in preparing an assembly of spherical nc-Si dots, with diameter of 8 nm and its dispersion less than 1 nm by using the VHF digital plasma process [1,2]. However, in the present deposition chamber, individual nc-Si dots are deposited randomly on the substrates, and controlling position of the nc-Si dots is a very challenging issue.…”

Section: Introductionmentioning

confidence: 99%

High-density assembly of nanocrystalline silicon quantum dots

Tanaka

Yamahata

Tsuchiya

et al. 2006

Current Applied Physics

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This paper reports on a new bottom-up technique of forming silicon nanostructures based on assembly of nanocrystalline (nc) Si dots from the solution. The nc-Si dots with a diameter of 8 ± 1 nm were fabricated by using VHF plasma decomposition of pulsed SiH 4 gas supply and deposited on the substrate randomly. We first studied the method of making the nc-Si dot dispersion solution by immersing the deposited wafer into various kinds of solvent with ultra sonic treatment. We found that methanol works as a suitable solvent for nc-Si dots. We then add a drop of the nc-Si dot solution onto other substrates and evaporated it. During the evaporation the nc-Si dots were assembled in the solution via the lateral capillary meniscus force which works as an attractive force between the dots. Use of SiO 2 substrate with good surface wettability with the solution was found vital to have the maximum meniscus force and to have two-dimensional assembly of the dots. The evaporation speed was carefully controlled via temperature and evaporation pressure to achieve high dot density assembly. In addition, we examined the assembly of the nc-Si dots on the silicon-on-insulator substrates with various kinds of nanoscale patterning and succeeded in making the nc-Si dots cluster bridging between the nanoelectrodes with a gap of as small as 20 nm.

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Section: Introductionmentioning

confidence: 99%

High-density assembly of nanocrystalline silicon quantum dots

Tanaka

Yamahata

Tsuchiya

et al. 2006

Current Applied Physics

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“…We have also found that argon dilution markedly enhances the deposition rate of nc-Si, as shown in Fig. 6, due to the more efficient plasma activation by heavier argon ions [10]. By increasing number of cycles of gas pulses, we can increase the dot density per area and even we can deposit a multi-layered stack of Si particles.…”

Section: Size Controlmentioning

confidence: 69%

Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition

Oda

Nishiguchi

2001

J. Phys. IV France

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Nanocrystalline silicon is a promising material for future ultralarge scale integrated circuits and display devices. Various methods have been demonstrated for the fabrication of nanocrystalline silicon with size less than 10nm. We have prepared nanocrystalline silicon ultrafine particles by very-high-frequency plasma decomposition of silane and hydrogen. Nanoparticles formed in the plasma cell are extracted through a small orifice and deposited onto substrates. The size of the particle is determined by the pulse sequence of gases supplied to the plasma cell, and an average diameter of 8nm with a size distribution of 1nm can be obtained. Coulomb blockade, a characteristic single-electron tunneling property, has been investigated in an array of nanoparticles and an individual particle deposited onto nanoscale electrodes.

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“…Uniform nc-Si dots could be deposited with high deposition rates using Ar dilution [7]. Transmission electron microscopy (TEM) showed the lattice image in these nc-Si dots, which indicated that the nc-Si dots grown by the process were single crystalline.…”

Section: Methodsmentioning

confidence: 99%

Photoluminescence of surface‐nitrided nanocrystalline silicon dots

Arai

Oda

2003

phys. stat. sol. (c)

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PACS 66.30.Pa, 78.55.Mb, 78.67.Bf Light-emitting surface-oxidized nanocrystalline-silicon (nc-Si) dots have been nitrided by nitrogen radicals. The durability of the nc-Si dots under laser illumination was improved by nitridation. It was concluded that Si 3 N 4 is formed at the interface between the nc-Si core and SiO 2 because a blue shift of the emission of the nc-Si dots was observed after nitridation at room temperature, suggesting that the interface of the nc-Si dots was improved. This result illustrates that nitridation is an effective treatment to improve the durability of the nc-Si dots.

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Preparation of Nanocrystalline Silicon Quantum Dots by Pulsed Plasma Processes with High Deposition Rates

Cited by 19 publications

References 11 publications

High-density assembly of nanocrystalline silicon quantum dots

High-density assembly of nanocrystalline silicon quantum dots

Nanocrystalline silicon quantum dots prepared by VHF plasma enhanced chemical vapor deposition

Photoluminescence of surface‐nitrided nanocrystalline silicon dots

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