Preparation of non-spherical silica composite abrasives by lanthanum ion-induced effect and its chemical–mechanical polishing properties on sapphire substrates

Dong, Yue; Lei, Hong; Liu, Wenqing; Wang, Tianxian; Xu, Li

doi:10.1007/s10853-018-2357-6

Cited by 22 publications

(14 citation statements)

References 26 publications

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“…In addition, there are four chemical states for Al 2p, where it implies that there are four compounds. The analysis results have confirmed that solid-phase chemical reactions happen as shown in the following chemical reactions [5,14,25]:…”

Section: Materials Removal Mechanismsupporting

confidence: 54%

“…ISNAs were synthesised by the nickel ion‐induced effect combined with growth method. The specific process is as follows: first of all, active silicic acid is prepared by ion exchange method [14, 20]. Next, activated silicic acid that has been prepared was placed into a four‐necked flask.…”

Section: Methodsmentioning

confidence: 99%

“…That is to say, the content of nickel compounds plays an important role in the stability on polishing fluid. When the content of the nickel compound exceeds a certain amount, the zeta potential will excessively decrease, thereby being insufficient to resist Van der Waals force among particles [14]. The silica may agglomerate or even precipitate, resulting in scratches and damages for the surface of sapphire.…”

Section: Synthesis Process Of Isnasmentioning

confidence: 99%

“…CMP combines mechanical action of nano‐abrasives with chemical action of nano‐abrasives to deal with workpieces, thereby obtaining ultra‐flat and ultra‐smooth surface, which can achieve a dynamic balance that allows the plane of the sapphire substrate to reach atomic levels [4, 13]. It is the only technology that enables to provide a global flattening and is widely used in many fields [14].…”

Section: Introductionmentioning

confidence: 99%

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Preparation of irregular silica nano‐abrasives for the chemical mechanical polishing behaviour on sapphire substrates

Dong¹,

Lei²,

Liu³

2019

Micro & Nano Letters

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Abrasives directly affect the polishing rate and surface quality for sapphire chemical mechanical polishing (CMP). In this work, irregular silica nano-abrasives were synthesised by nickel ion-induced effect combined with growth method in order to simultaneously acquire a high polishing rate and a smooth and flat surface quality on sapphire. The synthesis process of irregular silica nano-abrasives is predicted and analysed by zeta potential. The irregular silica nano-abrasives have a distinguished CMP behaviour for a 22.72% increase in polishing rate and a flat surface quality of sapphire. X-ray photoelectron spectroscopy analysis results have confirmed these solid-phase chemical reactions happen during the sapphire CMP process. In addition, it was analysed about the polishing process and mechanism by establishing a contact model between nano-abrasives and sapphire.

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Section: Materials Removal Mechanismsupporting

confidence: 54%

Section: Methodsmentioning

confidence: 99%

Section: Synthesis Process Of Isnasmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

See 2 more Smart Citations

Preparation of irregular silica nano‐abrasives for the chemical mechanical polishing behaviour on sapphire substrates

Dong¹,

Lei²,

Liu³

2019

Micro & Nano Letters

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“…Zhong et al [53] indicate a greatly lower comparing to this research ratio because they applied a fixed abrasive CMP following a polishing process with a fabric cloth pad. Other experimental studies [54][55][56] survey an entirely polishing process, in which the sliding motion is an important factor in the initial and middle steps, therefore, the ratio is lower than this research.…”

Section: Effect Of Abrasive Size and Orientationmentioning

confidence: 71%

Atomistic wear mechanisms and deformation evolution in polishing

Fang

Nguyen

2020

Preprint

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Our aim with this study was a new insight into the sub-nanoscale of polishing and provides the atomic view of the material removal and wear mechanisms by carrying out molecule dynamics simulation. We proposed and analyzed a model with a diamond abrasive particle that sliding or rolling on the surface of GaN workpieces. The authors investigated, step by step, the effects of polishing depths, speeds, abrasive sizes, and crystalline orientations on the wear mechanisms and material removal. The wear mechanisms of the sliding motion were adhering, ploughing, and cutting, depending on the depths. While the wear mechanisms of rolling motion are adhering and ploughing. Notably, in both stages of sliding and rolling, there is an existence of a critical point at 5.0 Å depth when we considered the deformation behaviors. Below that critical point, the GaN workpiece will present an elastic deformation. From the aforementioned point, the workpiece would be plastically deformed. Besides, from 10 Å depth, the dislocation began to appear and evolute simultaneously with the development of the maximum shear stress. The sliding motion on the Ga-face could remove a greater number of atoms than that of the N-face. Moreover, direction [1-100] on Ga-face requesting more forces to polish than direction [11-20]. In conclusion, the main achievements that contribute to the field can be summarized as follows: the atomistic wear mechanisms of sliding and rolling motions, material removal, and the role of rolling motion at the sub-nanoscale during the ultrafine flat polishing process.

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Recent developments and applications of chemical mechanical polishing

Zhong

2020

Int J Adv Manuf Technol

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Preparation of non-spherical silica composite abrasives by lanthanum ion-induced effect and its chemical–mechanical polishing properties on sapphire substrates

Cited by 22 publications

References 26 publications

Preparation of irregular silica nano‐abrasives for the chemical mechanical polishing behaviour on sapphire substrates

Preparation of irregular silica nano‐abrasives for the chemical mechanical polishing behaviour on sapphire substrates

Atomistic wear mechanisms and deformation evolution in polishing

Recent developments and applications of chemical mechanical polishing

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