Preparation of p–n junction BiVO4/Ag2O heterogeneous nanostructures with enhanced visible-light photocatalytic activity

Li, Junqi; Cui, Mingming; Guo, Zhan‐Yun; Liu, Zhenxing; Zhu, Zhiliang

doi:10.1016/j.matlet.2015.03.078

Cited by 39 publications

(1 citation statement)

References 12 publications

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“…The more common strategy to increase the photoactivity of BiVO 4 is based on the formation of p-n heterojunctions. Various p-n heterojunctions such as BiOI/BiVO 4 16 17 , BiOCl/BiVO 4 18 , Bi 2 O 3 /BiVO 4 19 20 , NiO/BiVO 4 21 , Si/BiVO 4 22 , CuO/BiVO 4 23 , Cu 2 O/BiVO 4 24 , Ag 2 O/BiVO 4 25 , and Co 3 O 4 /BiVO 4 26 have been proven to be an efficient method for keeping electron-hole pairs separated due to the built-in potential produced by the heterojunction. However, those mentioned p-type semiconductors are either unstable in water under oxidizing conditions or unable to absorb a wider visible light range than BiVO 4 , thus limiting its application on photoelectrochemical water splitting.…”

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A hole inversion layer at the BiVO4/Bi4V2O11 interface produces a high tunable photovoltage for water splitting

Santos

Rodríguez

Afonso

et al. 2016

Sci Rep

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The conversion of solar energy into hydrogen fuel by splitting water into photoelectrochemical cells (PEC) is an appealing strategy to store energy and minimize the extensive use of fossil fuels. The key requirement for efficient water splitting is producing a large band bending (photovoltage) at the semiconductor to improve the separation of the photogenerated charge carriers. Therefore, an attractive method consists in creating internal electrical fields inside the PEC to render more favorable band bending for water splitting. Coupling ferroelectric materials exhibiting spontaneous polarization with visible light photoactive semiconductors can be a likely approach to getting higher photovoltage outputs. The spontaneous electric polarization tends to promote the desirable separation of photogenerated electron- hole pairs and can produce photovoltages higher than that obtained from a conventional p-n heterojunction. Herein, we demonstrate that a hole inversion layer induced by a ferroelectric Bi4V2O11 perovskite at the n-type BiVO4 interface creates a virtual p-n junction with high photovoltage, which is suitable for water splitting. The photovoltage output can be boosted by changing the polarization by doping the ferroelectric material with tungsten in order to produce the relatively large photovoltage of 1.39 V, decreasing the surface recombination and enhancing the photocurrent as much as 180%.

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confidence: 99%

A hole inversion layer at the BiVO4/Bi4V2O11 interface produces a high tunable photovoltage for water splitting

Santos

Rodríguez

Afonso

et al. 2016

Sci Rep

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Facet, Junction and Electric Field Engineering of Bismuth‐Based Materials for Photocatalysis

Huang

Shen

et al. 2018

ChemCatChem

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Semiconductor photocatalysis has gained tremendous attention with great prospects to settle the worldwide environmental pollution and energy shortage issues. Many efforts have been made for semiconductor photocatalysts to overcome the disadvantages of the weak photoabsorption and high recombination of charges in the past few decades. Developing active facets and junctions has been diffusely used and shows huge potentials. The surface of active facet where the reductive and oxidative reactions occur has a great influence on the efficiency of reaction molecules that takes over the photogenerated charges. Construction of junctions is regarded as one of the most effective methods to improve the separation efficiency of photogenerated charges. This review mainly focuses on summarizing the synthesis of active facet, facet dependent activities in various photocatalytic reactions, the construction of different kinds of heterojunctions and homojunctions, and the combination of active facet and junctions of bismuth‐based photocatalysts recently. In addition, other new and effective routes, like internal electric field (IEF) regulation and polarization electric field control are also shortly summarized. The review will deepen our understanding on bismuth‐based photocatalysts and provide novel guidelines and perspectives for designing high‐performance photocatalysts.

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Nanomaterials for the Photoremediation of Pollutants

Chahkandi

Zargazi

2020

Environmental Chemistry for a Sustainable World

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Preparation of p–n junction BiVO4/Ag2O heterogeneous nanostructures with enhanced visible-light photocatalytic activity

Cited by 39 publications

References 12 publications

A hole inversion layer at the BiVO4/Bi4V2O11 interface produces a high tunable photovoltage for water splitting

A hole inversion layer at the BiVO4/Bi4V2O11 interface produces a high tunable photovoltage for water splitting

Facet, Junction and Electric Field Engineering of Bismuth‐Based Materials for Photocatalysis

Nanomaterials for the Photoremediation of Pollutants

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