Preparation of p‐type transparent conducting tin–antimony oxide thin films by DC reactive magnetron sputtering

Abstract

P‐type transparent conducting tin–antimony oxide (TAO) films were successfully prepared by DC reactive magnetron sputtering followed by post annealing in the air. Structural, optical and electrical properties of the TAO films were investigated. X‐ray diffraction studies showed that the films are polycrystalline with orthorhombic structure of Sb2O4. UV–Visible absorption and transmittance spectra showed that the optical band‐gap of the TAO films is about 3.90 eV, and the overall transmittance is higher than 85% in the visible region. Hall effect measurement indicated that the Sn/Sb ratio is a critical parameter to get p‐type conducting TAO films. It was found that 0.19 < Sn/Sb ratio < 0.43 is the range in which p‐type TAO films could be obtained. Hole concentration as high as 4.03 × 1019 cm–3 and electrical resistivity as low as 0.155 Ωcm were achieved, showing potential applications of TAO films as p‐type transparent conducting films. (© 2008 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

Optical and electrical properties of SnO2:Sb thin films deposited by oblique angle deposition

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Spatially Confined Functionalization of Transparent NiO Thin Films with a Luminescent (1,10‐Phenanthroline)tris(2‐thenoyltrifluoroacetonato)europium Monolayer

“…Many methods have been employed to obtain NiO films such as reactive magnetron sputtering, metal organic chemical vapor deposition (MOCVD), thermal evaporation, sol–gel deposition, pulsed‐laser‐deposition (PLD) and intermittent spray pyrolysis 34–37. Among the different fabrication methods, MOCVD represents a reliable and reproducible technique for large‐scale production of highly uniform films in both thickness and composition.…”

Mobility enhancement of p-type SnO2by In-Ga co-doping

“…Like many wide gap oxide semiconductor materials, SnO 2 suffers doping unipolarity and can be easily doped as good n‐type conduction. Considerable efforts have been made to achieve p‐type conduction in SnO 2 , for example, by doping indium (In), gallium (Ga), Al, Sb, Li, Fe, and N 5–11. However, the electrical properties of these p‐SnO 2 thin films need further improvement to satisfy the practical requirements for transparent electronics.…”