Preparation of Pb(Mg_1/3Nb_2/3)O₃–Pb(Zr,Ti)O₃ Thin Films by RF-Magnetron Sputtering and Their Electrical and Piezoelectric Properties

Abstract

The 0.875Pb(Mg 1=3 Nb 2=3 )O 3 -0.125Pb(Zr,Ti)O 3 [0.125PMN-0.875PZT (50/50)] thin films, which have an extremely large piezoelectric coefficient d 31 of À225 pm/V, have been successfully obtained on (100) Si substrates by RF-magnetron sputtering. These PMN-PZT thin films have a high (001) orientation. The dependences of the electrical and piezoelectric properties of these films on substrate heating temperature were evaluated. The " r of PMN-PZT films prepared in the substrate heating temperature range of 540 to 620 C was almost constant at 1400. The d 31 was measured from the tip deflection of the cantilever beams. Even without a poling treatment, the d 31 of the PMN-PZT thin films at 580 C was À225 pm/V. This d 31 was 50% larger than that of PZT thin films deposited under the same conditions. These PMN-PZT thin films are attractive materials for micro actuator applications, especially for ink jet head actuators.

Structural Modification and Large Piezoelectricity of Strained (Na,Bi) TiO3–BaTiO3 Epitaxial Thin Films

“…These values are the highest for lead‐free piezoelectric thin films, and larger than that of PZT thin films . In particular, for the (110)‐oriented thin films, − e 31 * is comparable with that of relaxor Pb(Mg,Nb)O 3 –Pb(Zr,Ti)O 3 (PMN–PZT) thin films . It should be noted that the dependence of piezoelectricity on x for the present NBT–BT thin films seems to be consistent with the MPB behavior observed for bulk NBT–BT .…”

“…8 In particular, for the (110)-oriented thin films, Àe 31 * is comparable with that of relaxor Pb(Mg,Nb)O 3 -Pb(Zr,Ti) O 3 (PMN-PZT) thin films. 44 It should be noted that the dependence of piezoelectricity on x for the present NBT-BT thin films seems to be consistent with the MPB behavior observed for bulk NBT-BT. 3,5 We are unable to explain why the present NBT-BT thin films show high piezoelectric properties together with such MPB behavior at this time.…”

Fabrication and post heat treatment of 0.5Pb (Mg 1/3 Nb 2/3) O 3 -0.5Pb(Zr 0.48 Ti 0.52 )O 3 coatings by supersonic plasma spray

“…The subsequent enhancements in dielectric performance were attributed to the reduction in pores, amorphous (550 • C) and pyrochlore phase (650 • C) respectively. However, the dielectric performance is still weak compared with the PMN-PZT ceramic fabricated by other different methods (Table A1) [5,[28][29][30][31][32]. It is known that dielectric permittivity are not only dependent on the defect and phase composition, but also affected by the gran size, orientation et al Apart from the inevitable volatilization and pores, factors in more micro-level should been taken into consideration.…”

“…Inhibition in grain growth at elevated temperature were speculated as the results of accumulation of ZrO 2 in the grain boundary and therefore inhibited the dielectric properties. References ' a ' [28],' b ' [29], ' c ' [5], ' d ' [30], ' e ' [31] and ' f ' [32]. …”

Structure and electrical properties of (111)-oriented Pb(Mg1/3Nb2/3)O3-PbZrO3-PbTiO3thin film for ultra-high-frequency transducer applications

“…Hence, it is worthwhile to investigate this ternary system thin film for MEMS applications. Although, to date, there have been several papers about PMN-PZT films [9–11], no literature has reported 40PMN-25PZ-35PT thin film.…”