Preparation of PbZrO₃–PbTiO₃–Pb(Mg_1/3Nb_2/3)O₃ Thick Films by Screen Printing

Abstract

Molecular dynamics based on the environment-dependent interatomic potential is used to investigate the influence of the nature and distribution of defects on solid state, homogeneous amorphization of Si. To this end, different kinds of defects, including single interstitials and vacancies (both uncorrelated and correlated distributions), bond defects, and small interstitial and vacancy clusters, have been considered. It is shown that the threshold defect concentration for amorphization depends on the defect type, and, in the case of single defects, on the degree of correlation between interstitial and vacancy distributions. The threshold varies within the interval [0.18-0.28] atomic fraction, the upper value corresponding to the case of bond defects, the lower to the uncorrelated distributions of single 110 split interstitials plus compensating vacancies.

PZT Thick Films Fabrication Using a Sol-Gel Based 0-3 Composite Processing

“…Some fabrication processes have been devised for the fabrication of PZT thick films, such as sol-gel, screen printing, metallorganic decomposition and gas deposition processes. [4][5][6][7] However, all of these processes cannot produce dense, and crack-free PZT thick films at a relative low processing temperature. Recently, a sol-gel based deposition process has been developed and attracted a great deal of attention because of its great advantage of feasibility to deposit crack-free PZT thick films.…”

Structural and dielectric properties of Pb(Zr,Ti)O3 heterolayered thick films

“…Ferroelectric lead zirconate titanate (Pb(Zr,Ti)O 3 , PZT) material is one of the most important electric ceramics materials for use in capacitors of dynamic random access memories (DRAMs), gate materials of ferroelectric RAM (FeRAM), piezoelectric transducers, pyroelectric infrared detectors and non-linear optical devices [1,2]. PZT ceramics, which exhibit a high spontaneous polarization and a high dielectric constant, were widely investigated because of their potentials for low temperature processing and various electrical properties obtained by varying the composition ratio or adding the dopants.…”

Characteristics of PMW-PNN-PT-PZ thick films on various bottom electrodes

“…The screen printing method [5][6][7][8][9] has many advantages such as fabrication at low temperature, little process step, and mass production with low price.…”