Semiconductor photocatalysis is an attractive approach to efficient solar energy conversion, reliant on appropriately engineered band structures to promote surface reactions under light irradiation. There are three fundamental factors for consideration in the design and development of semiconductor photocatalysts: (i) light absorption, (ii) separation and transport of photogenerated electrons and holes in bulk, and (iii) their transfer on the surface. [1][2][3][4][5] As a quintessential example of semiconductor photocatalysts, transition metal oxides and nitrides, in which valence band maxima and conduction band minima consists of anionic p states and cationic d states, respectively, always suffer from the much smaller mobility of holes in the valence band than electrons in the conduction band due to the intrinsically smaller slope of p states than d states at the extrema. [6][7][8][9] Under light irradiation, this imbalance could lead to a larger population or a higher probability of surface-reaching electrons than that of holes. As a consequence, the photocatalytic activity is largely compromised because most photocatalytic reactions, including hydrogen release from water splitting or a water/electron scavenger mixture, are controlled by (multi)holes involved in