Preparation of Sb2Se3-based ceramics and glass-ceramics from native thin films deposited on Kapton foil

Formation of 2D-Structured InSe Ceramics from Amorphous Phase Deposited on a Kapton Foil

“…The slowdown of the crystalline phase formation may also be explained by the rigidity of the thicker InSe films, not yielding to the macroscopic bending force introduced through the difference in thermal expansion coefficients (CTE Kapton = 20 × 10 –6 °C –1 , CTE InSe = 10–17 × 10 –6 °C –1 ). This internal tensile stress may be the reason for the hindered crystal growth of the highly ordered 2D layers––akin to the changes in the crystal growth behavior recently observed for Se–Te and Sb 2 Se 3 thin films.…”

“…The partition of the two processes at higher d f also indicates that greater InSe film thickness slows down the crystallization (second) process, and progressively, a larger fraction of the 2D-layered structure forms independently, at a higher temperature. The slowdown of the crystalline phase formation may also be explained by the rigidity of the thicker InSe films, not yielding to the macroscopic bending force introduced through the difference in thermal expansion coefficients (CTE Kapton = 20 × 10 −6 °C−1 , 99 tensile stress may be the reason for the hindered crystal growth of the highly ordered 2D layers−−akin to the changes in the crystal growth behavior recently observed for Se−Te 52 and Sb 2 Se 3 53 thin films. Apart from the large difference in the slopes of the Kissinger dependences obtained for the two kinetic peaks, Figure 7B also shows the evolution of T p *s with respect to d f .…”

“…In addition, the method employs a regular heat-flow DSC system (benefiting the well-performing verified features of a commercial high-end instrument), the calibration of which is accustomed to a specific type of the sample with low thermal conductivity. Based on this type of measurement, it was found that the substrate physicochemical properties are critical for the nucleation and crystal growth processes occurring in the observed chalcogenide thin films. − In the present paper, we will focus on the kinetics of the crystalline phase formation in an amorphous InSe thin film deposited on Kapton foil (poly-[4,4′-oxydiphenylene-pyromellitimide]). Although the fabrication of the 2D-layered InSe structure on the polymeric material can be directly related to the latest emerging hi-tech applications (flexible electronics and optoelectronics, , polymeric solar cells, , and polymer capping of the InSe layer in FETs), no information about the crystal growth rate associated with the formation of the 2D InSe crystalline phase has been published.…”

Native Crystal Growth Revealed by a Joint Microscopy–Calorimetry Technique in (GeS2)0.1(Sb2S3)0.9 Thin Amorphous Films: A Critical Role of Internal Stress and Mechanical Defects

“…Such measurements did not have the potential to reveal the intricacies associated with the aforementioned aspects influencing the crystal growth in chalcogenide thin films. This was changed only recently − by the development of a joint instrumental setup, where the microscopic and calorimetric (specifically using differential scanning calorimetry (DSC)) measurements were performed under identical conditions on as-deposited thin films (i.e., films still attached to the substrate). The high variability of the applicable experimental conditions (achieved by employing DSC in the preparation of samples for microscopy) together with the in situ DSC measurements of as-deposited films represent a huge step forward, compared to the previous approaches limited to the inaccurate and poorly controlled preparation of the microscopic samples and to the DSC measurements of massively altered (scratched-off of the substrates) films.…”