Preparation of SrAl2O4: Eu2+, Dy3+ nanometer phosphors by detonation method

Li, Xiaojie; Qu, Yandong; Xie, Xinghua; Wang, Zhanlei; Rui-yong, LI

doi:10.1016/j.matlet.2006.03.081

Cited by 44 publications

(23 citation statements)

References 13 publications

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“…Recently, strontium aluminate phosphors activated by Eu 2 + , Dy 3 + ions have attracted a lot of attention since they show excellent properties such as high quantum efficiency, long persistence of phosphorescence and good chemical stability [2]. In most of the reported works [3][4][5][6][7], the SrAl 2 O 4 :Eu 2 + ,Dy 3 + phosphors have been prepared and investigated in the form of powders. However, for various industrial applications such as device fabrication and surface coatings it is also important to investigate the performance of these phosphors in the form of thin films.…”

Section: Introductionmentioning

confidence: 99%

The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4:Eu2+,Dy3+ thinfilms

Nsimama

Ntwaeaborwa

Swart

2011

Journal of Luminescence

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Section: Introductionmentioning

confidence: 99%

The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4:Eu2+,Dy3+ thinfilms

Nsimama

Ntwaeaborwa

Swart

2011

Journal of Luminescence

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“…Among the techniques used to prepare luminescent thin films, PLD has several attractive features, including stoichiometric transfer of the target material, generation of quality plume of energetic species, hyper-thermal reaction between the ablated cations and molecular gas in the ablation plasma and compatibility with background pressures ranging from UHV to 100 Pa [19]. The plasma fabricated during pulsed laser ablation is very energetic, and its mobility can be easily controlled by changing processing parameters [20]. The presence of a background gas in the chamber has a strong influence on the quality of the plasma produced by the laser.…”

Section: Introductionmentioning

confidence: 99%

The influence of different species of gases on the luminescent and structural properties of pulsed laser-ablated Y2O2S:Eu3+ thin films

2016

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Y 2 O 2 S:Eu 3? films have been grown on Si (100) substrates by using a pulsed laser deposition technique. The thin films grown under vacuum, argon and oxygen ambient have been characterized using structural and luminescent measurements. The X-ray diffraction patterns showed mixed phases of cubic and hexagonal crystal structures. The crystallinity of the film deposited in vacuum is poor, but improved significantly in argon and oxygen atmosphere. Similarly, both scanning electron microscopy and atomic force microscopy confirmed that different species of gases affected the morphology of the films. The average band gap of the films calculated from diffuse reflectance spectra using the KubelkaMunk function was about 4.69 eV. The photoluminescence measurements indicated red emission of Y 2 O 2 S:Eu 3? thin films with the most intense peak appearing at 612 nm, which is assigned to the 5 D 0 -7 F 2 transition of Eu 3? . The intensities of this most intense peak greatly depend on the species of gas with argon having the highest peak. This phosphor has applications in the flat panel displays.

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“…The Eu 3? -doped Y 2 O 3 material offers many advantages over other phosphor materials as a candidate for red-emitting applications due to its characteristic energy levels [28].…”

Section: Introductionmentioning

confidence: 99%

Temperature dependence of structural and luminescence properties of Eu3+-doped Y2O3 red-emitting phosphor thin films by pulsed laser deposition

2016

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Pulse laser deposition was used to obtain nanocrystalline red-emitting Y 2 O 3 :Eu 3? thin-film phosphors. X-ray diffraction measurements show that the un-annealed thin film was amorphous, while those annealed were crystalline. At lower annealing temperature of 600-700°C, cubic bixbyite Y 2 O 3 :Eu 3? was formed. As the annealing temperatures were increased to 800°C, hexagonal phase emerged. The average crystallite size of the film was 64 nm. Photoluminescence measurement indicates intense red emission around 612 nm due to the 5 D 0 ? 7 F 2 transition. Scanning electron microscopy indicated that agglomerates of noncrystalline particles with spherical shapes were present for the un-annealed films. After annealing at high temperature, finer morphology was revealed. Atomic force microscopy further confirmed the formation of new morphology at the higher annealing temperatures. UV-Vis measurement indicated a band gap in the range of 4.6-4.8 eV. It was concluded that the annealing temperature played an important role in the luminescence intensity and crystallinity of these films.

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Preparation of SrAl2O4: Eu2+, Dy3+ nanometer phosphors by detonation method

Cited by 44 publications

References 13 publications

The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4:Eu2+,Dy3+ thinfilms

The effect of different gas atmospheres on luminescent properties of pulsed laser ablated SrAl2O4:Eu2+,Dy3+ thinfilms

The influence of different species of gases on the luminescent and structural properties of pulsed laser-ablated Y2O2S:Eu3+ thin films

Temperature dependence of structural and luminescence properties of Eu3+-doped Y2O3 red-emitting phosphor thin films by pulsed laser deposition

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