1994
DOI: 10.1002/sia.740210806
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Preparation of thin AlOx (0 ≤ x ≤ 1.5) films on gold and polycarbonate characterized by XPS, EPMA, AFM and TEM

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Cited by 11 publications
(6 citation statements)
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“…It implies that the electrons of aluminum transfer to the bonding oxygen to form interfacial Al–O bonds, which is consistent with our following DFT calculations. The Al–O band is also recognized and located at 532.80 eV in the O 1s spectra acquired at CFRTP-3 and CFRTP-HI45-3 (Figure c) . It is necessary to point out that the carbon fiber within CFRTP and CFRTP-HI would not react with 6061 due to the absence of Al–C and O–C contributions in XPS results.…”
Section: Resultsmentioning
confidence: 96%
“…It implies that the electrons of aluminum transfer to the bonding oxygen to form interfacial Al–O bonds, which is consistent with our following DFT calculations. The Al–O band is also recognized and located at 532.80 eV in the O 1s spectra acquired at CFRTP-3 and CFRTP-HI45-3 (Figure c) . It is necessary to point out that the carbon fiber within CFRTP and CFRTP-HI would not react with 6061 due to the absence of Al–C and O–C contributions in XPS results.…”
Section: Resultsmentioning
confidence: 96%
“…As shown in Figures and S3, for GLM, the Ga element in the Ga-rich film is in the chemical state of Ga 2 O 3 (1118.2 eV) and elemental Ga (1116.5 eV), and the ratio of the peak area between Ga 2 O 3 and Ga (1.97) indicates a high content of Ga 2 O 3 . However, for GA0.5, the Al element in the Al-rich film exists entirely in the form of metal oxides (AlO x : 75.8 eV; , Al 2 O 3 : 74.3 eV), and the O element mainly exists in the form of Al oxides (AlO x : 532.3 eV; Al 2 O 3 : 531.1 eV). The Ga element in the Al-rich film also exists in the chemical state of Ga 2 O 3 and elemental Ga, but the content of Ga 2 O 3 is almost equivalent to that of elemental Ga by calculating the peak area ratio (0.95).…”
Section: Resultsmentioning
confidence: 99%
“…The impurity precipitates with two-or three-dimensional particles act as pinning sites for grain boundary migration, preventing normal grain growth for grains with unimodal distributions of the grain size and consistent textures [20]. Abnormal grain growth has been reported for a number of Al alloy systems in which normal grain growth is inhibited by the impurities [21][22][23]. In our previous experiment [24], the Al:Si films deposited at elevated T s exhibited larger σ rms values compared to the pure Al films prepared under identical deposition conditions.…”
Section: Methodsmentioning
confidence: 98%