1998
DOI: 10.1016/s0040-6090(97)00900-0
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Preparation of thin films of copper(I) bromide by r.f. sputtering: morphology and electrical properties

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Cited by 23 publications
(12 citation statements)
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“…sputtering. 16 Chemical vapor deposition (CVD) is a more appealing growth process for HTMs because it can produce films with high thickness uniformity and conformality over large areas of deposition. However, metal fluorides are the only halide compounds with known CVD growth processes.…”
mentioning
confidence: 99%
“…sputtering. 16 Chemical vapor deposition (CVD) is a more appealing growth process for HTMs because it can produce films with high thickness uniformity and conformality over large areas of deposition. However, metal fluorides are the only halide compounds with known CVD growth processes.…”
mentioning
confidence: 99%
“…There are two metal halides that have been previously reported for sensing studies, AgCl [18,19] and CuBr [13][14][15][16][17]20]. The species that have been examined are NH 3 and (CN) 2 , and both these molecules form coordination complexes with the metal ion.…”
Section: Discussionmentioning
confidence: 99%
“…Knauth and co-workers, in a series of papers have studied the conduction properties of CuBr under ambient conditions and also demonstrated that sputtered films of CuBr can be used for NH 3 sensing via resistance measurements [13][14][15][16][17]. They have interpreted the current-voltage characteristics of the CuBr films with p-type semiconductivity of the films and a reduced copper deficiency on copper substrates.…”
Section: Introductionmentioning
confidence: 99%
“…[24] Fixed sputtering conditions were applied throughout this work: The base pressure before deposition was 10 À4 Pa and the argon pressure during deposition was 3 Pa with a flow rate of 10 mL min À1 . An rf power of 40 W was applied and a 15 min ™presputter∫ was made before each deposition to clean the target and to obtain stable discharge conditions.…”
Section: Methodsmentioning
confidence: 99%