Preparation of thin films of the ternary heavy fermion system CeNi 2 Ge 2

Schmied, B.; Fecher, Gerhard H.; Schneider, Claudia; Schönhense, G.

doi:10.1007/s003390050682

Cited by 5 publications

(4 citation statements)

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“…Paying special attention to surface quality we could determine the experimental electronic band structure along certain threedimensional paths in the ⌫-N-Z plane. In contrast to previous investigations 18,20 we observe strongly dispersing bands. A comparison with new LDA band structure calculations along spherical paths in the three-dimensional BZ allows the unambiguous assignment of these experimentally observed bands to be predominantly of Ni 3d character.…”

Section: Discussioncontrasting

confidence: 84%

“…34,35 The spectra shown in Ref. 20 show exactly in this energy range a considerable intensity which does not exist in our data. An influence of the larger angular acceptance (⌬⌰ϭ3°) and energy resolution (⌬E ϭ150 meV) alone, compared to the setup for the data presented here, cannot explain the obvious discrepancy.…”

Section: Resultscontrasting

confidence: 61%

“…Although in situ cleaved single crystals are known to yield well ordered and contamination free surfaces, there are only a few ARPES experiments on singlecrystalline Ce compounds in the literature, 15,16 mainly because of the restricted availability of such crystals and problems in the in situ cleavage procedure. In the particular case of CeNi 2 Ge 2 , the only published ARPES measurements [17][18][19][20][21][22] have been performed on in situ prepared, epitaxially grown films in different orientations.…”

Section: Introductionmentioning

confidence: 99%

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Electronic structure ofCeNi2Ge2investigated by angle-resolved photoemission and density-functional calculations

et al. 2001

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We present a detailed investigation of the electronic band structure of the heavy Fermion compound CeNi 2 Ge 2 by means of angle resolved photoemission spectroscopy ͑ARPES͒. Measured with high angular and energy resolution, the experimental data from the ͑001͒ surface display several narrow bands close to the Fermi energy. The nature of these bands was identified by a comparison with augmented spherical wave ͑ASW͒ band structure calculations based on density functional theory ͑DFT͒ in the local density approximation ͑LDA͒. In contrast to the results of previous photoemission measurements on in situ prepared films of CeNi 2 Ge 2 we demonstrate that the investigated bands show strong dispersion, in agreement with the theoretical results. In addition we show that the orbital character of the states close to the Fermi level is mainly Ni 3d and that an ''unusual giant Kondo resonance'' does not exist in the photoemission spectra.

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Section: Discussioncontrasting

confidence: 84%

Section: Resultscontrasting

confidence: 61%

Section: Introductionmentioning

confidence: 99%

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Electronic structure ofCeNi2Ge2investigated by angle-resolved photoemission and density-functional calculations

et al. 2001

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“…PLD is another PVD technique, where high power laser light is used to vaporise material from the top surface of a stoichiometric target within a very short period of time, which then gets deposited on a substrate. Due [74] Sapphire dc MS Polycrystalline UPd 2 Al 3 [75] Al 2 O 3 (random, a-plane, r-plane), LaAlO * 3 (111) MBE (0001) oriented CeNi 2 Ge 2 [76] W( 110) MBE (001) oriented CeCu 6 [77] S i 3 N 4 (b)/Si(100) dc MS Polycrystalline UNi 2 Al 3 [78] Y A l O 3 (010), YAlO 3 (112) MBE (001) oriented with impurity phase CeCoIn 5 [79] A l 2 O 3 (a-plane, r-plane) MBE (001) oriented with impurity phase CeCoIn 5 [80] Cr(001) (b)/MgO(001) MBE (001) oriented CeCoIn 5 [81] A l 2 O 3 (r-plane), Cr(001)(b)/MgO(001) dc MS + thermal evaporation (001) oriented CeCoIn 5 [82] C e I n 3 (b)/MgF 2 (001) MBE Epitaxial CeCoIn 5 [83] A l 2 O 3 (0001) PLD Polycrystalline CeIn 3 [84] M g F 2 MBE Epitaxial CeRhIn 5 [85] C e I n 3 (b)/MgF 2 (001) MBE Epitaxial CeCu 2 Ge 2 [86] MgO(001) MBE Epitaxial CeFe 2 Ge 2 [86] MgO(001) MBE Epitaxial SmB 6 [87] Si(001) dc MS Polycrystalline SmB 6 [88] MgO(001) PLD Polycrystalline SmB 6 [89] MgO(001) MBE (001) oriented YbAl 3 [90] L u A l 3 (b)/Al(b)/MgO(001) MBE Epitaxial SmO [91] Y A l O 3 (110) MBE Epitaxial YbRh 2 Si 2 [92] Ge(001) MBE Epitaxial Ce [93] Graphene on 6H-SiC (0001) MBE Epitaxial a (b) indicates buffer layer, * indicates the substrate for which the best quality thin film was obtained.…”

Section: Pulsed Laser Depositionmentioning

confidence: 99%

Heavy fermion thin films: progress and prospects

Chatterjee

2021

Electron. Struct.

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Heavy fermion compounds are a remarkable class of inter-metallic systems, where the presence of several competing interactions leads to the emergence of a plethora of exotic properties. Although these compounds have been extensively studied in the last few decades, their epitaxial synthesis in a thin film form has remained poorly explored. The ability to create these materials in a bottoms-up manner opens up the possibility of both controlling and engineering their properties at the atomic scale, and allows fabrication of artificial heterostructures and superlattices that have no bulk analogues. Furthermore, experimental probes, which are compatible with a thin film geometry but are difficult to make use of with bulk single crystals, can be utilized to gain new insights into their electronic structure. Motivated by the recent advances in thin film technology, this review aims to explore the challenges in thin film growth of heavy fermion systems, presents an overview of the recent progress, and outlines unique opportunities that exist, which are of fundamental scientific importance and could be harnessed for potential technological applications.

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