1996
DOI: 10.1143/jjap.35.l227
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Preparation of Ti–Al–N Electrode Films by Pulsed Laser Ablation for Lead-Zirconate-Titanate Film Capacitors

Abstract: Titanium-aluminum-nitride (Ti–Al–N; TAN) electrode films were prepared by pulsed laser ablation on (100)Si and (100)MgO substrates for ferroelectric lead-zirconate-titanate ( Pb(Zr0.52Ti0.48)O3; PZT) thin-film capacitors. Capacitors with rather randomly oriented PZT films on the TAN/(100)Si did not show a ferroelectric hysteresis loop, but the capacitor with preferentially [100]-oriented PZT film on the TAN/(100)MgO did. This suggests that a TAN-electrode film was grown on (100)MgO with a high ox… Show more

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Cited by 6 publications
(5 citation statements)
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“…FIB-CVD processing of self-organized ripples on the sides of Pt pillars (pagodas in figure 7(g)) is fast and reproducible (figure 7(h)), but modeling is complex to evaluate the implantation cascade and subsequent secondary emission at the sides that activate ripple growth. FIB etching can also remove ripples from sides of tips (figure 7(i)), if appropriate for field emitting nanoscale neutron sources [84,85]. The complexities of ionassisted-CVD in 2D and especially FIB-CVD in 3D require further characterization of experiments and modeling [86,87].…”
Section: Self-organized Ripples Deposition During Erosion and Erosion...mentioning
confidence: 99%
“…FIB-CVD processing of self-organized ripples on the sides of Pt pillars (pagodas in figure 7(g)) is fast and reproducible (figure 7(h)), but modeling is complex to evaluate the implantation cascade and subsequent secondary emission at the sides that activate ripple growth. FIB etching can also remove ripples from sides of tips (figure 7(i)), if appropriate for field emitting nanoscale neutron sources [84,85]. The complexities of ionassisted-CVD in 2D and especially FIB-CVD in 3D require further characterization of experiments and modeling [86,87].…”
Section: Self-organized Ripples Deposition During Erosion and Erosion...mentioning
confidence: 99%
“…Perovskite PZT film was found to be grown on the TAN electrode, resulting in a ferroelectric hysteresis loop. However, the interface layer of the TAN was oxidized to some extent by the PZT deposition due to a low quality of the TAN film [7]. In the present study, the effect of ambient N 2 gas on the preparation of TAN thin films by PLA is explored for high-quality film synthesis.…”
Section: Introductionmentioning
confidence: 97%
“…TiN, however, is not sufficiently oxidation-resistant [6] for the preparation of PZT. Thus, we proposed Ti-Al-N (TAN) as an oxidation-resistant electrode material for the PZT based on the idea that aluminum oxide is good barrier against oxidation [7]. Perovskite PZT film was found to be grown on the TAN electrode, resulting in a ferroelectric hysteresis loop.…”
Section: Introductionmentioning
confidence: 99%
“…Then we prepared perovskite PZT films on Ni-alloy and Ti-Al-N electrodes [13,14]. Then, the PLD methods have attracted much attention in the field of ferroelectrics as a useful method to prepare good films.…”
Section: Introductionmentioning
confidence: 99%