Preparation of Ti-Doped ZnO/Bi2O3 Nanofilm Heterojunction and Analysis of Microstructure and Photoelectric Properties

Abstract

Ti-doped ZnO (TZO) and Bi2O3 thin films were designed and deposited by magnetron sputtering successively on ITO glass substrate to form a Ti-doped ZnO/Bi2O3 (TZO/Bi2O3) heterojunction. Microstructure and photoelectric properties of TZO, Bi2O3, and TZO/Bi2O3 films were tested and characterized. The results showed that TZO film with a hexagonal wurtzite structure was preferentially grown along the crystal plane (002), had a good crystallization state, and was an N-type semiconductor film with high transmittance (90%) and low resistivity (4.68 × 10−3 Ω·cm). However, the Bi2O3 film sputtered in an oxygen-containing atmosphere and was a polycrystalline film that was preferentially grown along the crystal plane (111). It had a lower crystallization quality than TZO film and was a P-type semiconductor film with low transmittance (68%) and high resistance (1.71 × 102 Ω·cm). The I–V curve of TZO/Bi2O3 composite films showed that it had an obvious heterojunction rectification effect, which indicates that the PN heterojunction successfully formed in TZO/Bi2O3 films.

Development and characterization of self-powered, highly sensitive optoelectronic device based on PVA-rGO nanofibers/n-Si

“…Methods such as vacuum vaporization, laser ablation, electrochemical activation, layer-by-layer chemical reaction [44][45][46], a chemical bath deposition [47], hydrothermal method [48,49], electrospinning [50] and magnetron sputtering [51] are used to prepare nanofilms. However, these methods have their own disadvantages, such as high cost, slowness and complexity [52].…”

Ti‐Doped ZnO Thin Films‐Based Transparent Photovoltaic for High‐Performance Broadband and Wide‐Field‐of‐View Photocommunication Window

“…[33] The ionic radius of Ti 4þ (68 pm) is slightly smaller than that of Zn 2þ (72 pm), allowing Ti to replace the Zn in the ZnO lattice. [36,37] Ti doping in ZnO has been found to improve the performance of photoelectric devices. [37] Ti is also used to improve photoelectric performance in other semiconductor materials like Ta 3 N 5 [25] and BiVO 4 .…”

“…[36,37] Ti doping in ZnO has been found to improve the performance of photoelectric devices. [37] Ti is also used to improve photoelectric performance in other semiconductor materials like Ta 3 N 5 [25] and BiVO 4 . [4] Ti-doped ZnO thin films-based TPV windows have been developed for broadband and wFoV photocommunication systems.…”

“…[ 36,37 ] Ti doping in ZnO has been found to improve the performance of photoelectric devices. [ 37 ] Ti is also used to improve photoelectric performance in other semiconductor materials like Ta 3 N 5 [ 25 ] and BiVO 4 . [ 4 ]…”