Preparation of transparent and conductive Al-doped ZnO thin films by ECR plasma enhanced CVD

Martin, A.; Espinós, J.P.; Justo, A.; Holgado, Juan P.; Yubero, F.; González‐Elipe, Agustín R.

doi:10.1016/s0257-8972(01)01609-7

Cited by 77 publications

(45 citation statements)

References 20 publications

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“…Previous studies on plasma deposited TiO 2 and ZnO thin films have shown that they may present different microstructures depending on deposition conditions and particularly on the plasma gas composition [52][53][54][55][56][57]. Thus, for example, either columnar or homogeneous TiO 2 thin films can be obtained by using pure O 2 or a mixture Ar+O 2 as plasma gas, respectively [55][56][57].…”

Section: 1columnar Thin Films Of Tio 2 and Zno On Flat And Non-metamentioning

confidence: 99%

Supported plasma-made 1D heterostructures: perspectives and applications

Borrás¹,

Macías-Montero²,

Romero‐Gómez³

et al. 2011

J. Phys. D: Appl. Phys.

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Section: 1columnar Thin Films Of Tio 2 and Zno On Flat And Non-metamentioning

confidence: 99%

Supported plasma-made 1D heterostructures: perspectives and applications

Borrás¹,

Macías-Montero²,

Romero‐Gómez³

et al. 2011

J. Phys. D: Appl. Phys.

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“…8) As compared to widely used ITO, SnO 2 films are chemically and thermally stabled, and also mechanically hard. 9) There are many techniques to prepare doped and un-doped SnO 2 thin films including chemical vapor deposition(CVD), [10][11] spray pyrolysis, [12][13] evaporation, 14) sol-gel, 15) pulsed laser deposition(PLD) 16) and sputtering.…”

Section: Introductionmentioning

confidence: 99%

Ta Doped SnO2 Transparent Conducting Films Prepared by PLD

Cho¹,

Seo²,

Kim³

et al. 2013

Korean. J. Mater. Res.

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Transparent and conducting thin films of Ta-doped SnO 2 were fabricated on a glass substrate by a pulse laser deposition(PLD) method. The structural, optical, and electrical properties of these films were investigated as a function of doping level, oxygen partial pressure, substrate temperature, and film thickness. XRD results revealed that all the deposited films were polycrystalline and the intensity of the (211) plane of SnO 2 decreased with an increase of Ta content. However, the orientation of the films changed from (211) to (110) with an increase in oxygen partial pressure (40 to 100 mTorr) and substrate temperature. The crystallinity of the films also increased with the substrate temperature. The electrical resistivity measurements showed that the resistivity of the films decreased with an increase in Ta doping, which exhibited the lowest resistivity (ρ~1.1 × 10 −3 Ω·cm) for 10 wt% Ta-doped SnO 2 film, and then increased further. However, the resistivity continuously decreased with the oxygen partial pressure and substrate temperature. The optical bandgap of the 10 wt% Ta-doped SnO 2 film increased (3.67 to 3.78 eV) with an increase in film thickness from 100-700 nm, and the figure of merit revealed an increasing trend with the film thickness.

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“…ZnO thin films have valued properties such as high optical transparency in the visible and near-infrared region of electromagnetic spectrum [1], chemical stability in hydrogen plasma [2], high refractive index [3], and wide band gap semiconductor [4]. The thin films of the metallic oxide have wide range of applications such as antireflection coating [5], surface acoustic wave devices [6], band pass filter [7], laser deflectors using piezoelectric and piezo-optic properties [8].…”

Section: Introductionmentioning

confidence: 99%