Preparation of transparent conducting B-doped ZnO films by vacuum arc plasma evaporation

Abstract

Articles you may be interested inMechanical and transparent conductive properties of ZnO and Ga-doped ZnO films sputtered using electroncyclotron-resonance plasma on polyethylene naphtalate substrates

The role of pH and boron doping on the characteristics of sol gel derived ZnO films

“…B doped ZnO films can be deposited by several methods such as metal organic chemical vapor deposition [16,17], DC sputtering [18], pulsed laser deposition (PLD) [19], chemical vapor deposition technique [20], spray pyrolysis [21,22], vacuum arc plasma evaporation [23], and sol gel [24,25]. Among these methods, the sol gel method is one of the most commonly used method for preparation of transparent and conducting oxides owing to its simplicity, safety, non-vacuum system of deposition and hence inexpensive method for large area coatings.…”

Impurity-doped ZnO Thin Films Prepared by Physical Deposition Methods Appropriate for Transparent Electrode Applications in Thin-film Solar Cells

“…The AZO and GZO pellets, used in PLD, were prepared by cutting the commercially available sintered AZO and GZO targets used in the MSDs. With VAPE, the BZO thin films were prepared at a pressure of 0.15 Pa, an Ar gas flow rate of 20 sccm and a cathode plasma power of 4.5 kW by a VAPE apparatus using pellets and fragments of sintered BZO as the source material [8,30]. The BZO pellets and fragments, used in both PLD and VAPE, were prepared by cold pressing a mixture of powdered ZnO and B 2 O 3 dopant (with contents of 0.1-1.3 wt.%), followed by sintering in an Ar gas atmosphere at 1000 o C. In this work, the thickness of all deposited thin films was in the range from 500 to 2000 nm, irrespective of the deposition method used.…”

Functional Oxide as an Extreme High-k Dielectric towards 4H-SiC MOSFET Incorporation

“…Previous work has yielded moderate success with HfO 2 , Al 2 O 3 and TiO 2 amongst other materials. A reduced interface trap density is observed albeit with increased gate leakage due to reduced bandgap (although this may be mitigated by a SiO 2 buffer layer) [1][2][3][4]. Fig.…”