Preparation of V-doped AZO thin films and ZnO nanorods on V-doped AZO thin films by hydrothermal process

Wu, Yen‐Ju; Yu, Wei; Hsieh, Chih Yi; Lee, P. M.; Liao, Chun-Hao; Liu, Y. S.; Liu, C. Y.

doi:10.1007/s10971-015-3614-7

Cited by 5 publications

(1 citation statement)

References 24 publications

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“…ZnO has a wide energy band gap (3.37 eV) and a high excitation energy (60 meV) at room temperature. Thus, in the past decade, ZnO has been proposed to be used in many applications on optoelectronic devices, such as transparent conducting oxide (TCO), light emitting diodes (LEDs), photodetectors, and solar cells . Besides the above applications, ZnO also is used as gas sensors because of its conductivity change in the specific gas ambient .…”

Section: Introductionmentioning

confidence: 99%

Growth Direction Control of ZnO Nanorods on the Edge of Patterned Indium–Tin Oxide/Aluminum-Doped Zinc Oxide Bilayers

Liao

Lee

et al. 2017

Crystal Growth & Design

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ZnO nanorods were grown on the edge of patterned indium−tin oxide/aluminum-doped zinc oxide (ITO/AZO) bilayers by a hydrothermal method. Since the mask ITO layer covered the AZO seed layer, the ZnO nanorods grew radially on the edge of the AZO seed layer. By etching the as-patterned ITO/AZO bilayers with dilute HCl solution, the under-cut space is created under the ITO layer. We found that the under-cut space is the key for the vertical growth direction of ZnO nanorods on the etched-edge of the AZO seed layer. Only the ZnO nuclei phase exactly in parallel to the substrate can extend out from the under-cut space and provides the (0002) plane for the growth of the vertical ZnO nanorods. Interestingly, we found that the ZnO nanorods grew laterally on the etched-edge of the patterned ITO/AZO bilayers prepared with 400 °C substrate temperature. Due to the higher crystallinity of the AZO seed layer (400 °C), the etched-edge microstructure is different from that of the AZO seed layers prepared at room temperature and 150 °C. As a result, the hexagonal ZnO nuclei phase grown on the etched-edge surface of the AZO seed layer (400 °C) has the (0002) preferred-plane facing the opening of the under-cut space. Therefore, the ZnO nanorods can grow horizontally on the exposed polar c-plane (0002) of the hexagonal ZnO nuclei phase along the substrate. By manipulating the under-cut etching space dimension and the surface microstructure on the etched-edge of the AZO seed layer, the growth direction of ZnO nanorods can be controlled.

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