2017
DOI: 10.1038/s41598-017-16732-4
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Preparation of ZnS@In2S3 Core@shell Composite for Enhanced Photocatalytic Degradation of Gaseous o-Dichlorobenzene under Visible Light

Abstract: In this study, novel ZnS@In2S3 core@shell hollow nanospheres were fabricated by a facile refluxing method for the first time, and the formation mechanism of hollow structure with interior architecture was discussed based on ion-exchange Ostwald ripening. As the photocatalytic material for degradation of gaseous o-Dichlorobenzene (o-DCB), the as-synthesized core@shell hollow nanospheres were found to show significantly enhanced catalytic performance for effective separation of photo-generated charges. Moreover,… Show more

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Cited by 26 publications
(4 citation statements)
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“…Figure a shows the Zn 2p core-level XP spectrum, wherein the doublet at binding energies (B.E.s) of 1045.1 and 1021.9 eV is attributed to the Zn 2p 1/2 and Zn 2p 3/2 emission lines, respectively. The splitting of 23.2 eV between the Zn 2p 1/2 and Zn 2p 3/2 features is in line with reports in the literature, indicating Zn in the ZnS/Bi 2 S 3 /ZnO NRs having a divalent state. , The asymmetric line shape of the contribution in the O 1s core-level XPS spectrum is the convolution of two components at B.Es. of 531.6 and 530.2 eV, respectively (Figure b).…”
Section: Resultssupporting
confidence: 91%
See 1 more Smart Citation
“…Figure a shows the Zn 2p core-level XP spectrum, wherein the doublet at binding energies (B.E.s) of 1045.1 and 1021.9 eV is attributed to the Zn 2p 1/2 and Zn 2p 3/2 emission lines, respectively. The splitting of 23.2 eV between the Zn 2p 1/2 and Zn 2p 3/2 features is in line with reports in the literature, indicating Zn in the ZnS/Bi 2 S 3 /ZnO NRs having a divalent state. , The asymmetric line shape of the contribution in the O 1s core-level XPS spectrum is the convolution of two components at B.Es. of 531.6 and 530.2 eV, respectively (Figure b).…”
Section: Resultssupporting
confidence: 91%
“…The splitting of 23.2 eV between the Zn 2p 1/2 and Zn 2p 3/2 features is in line with reports in the literature, indicating Zn in the ZnS/Bi 2 S 3 /ZnO NRs having a divalent state. 36,37 The asymmetric line shape of the contribution in the O 1s core-level XPS spectrum is the convolution of two components at B.Es. of 531.6 and 530.2 eV, respectively (Figure 4b).…”
Section: Structural and Compositional Characterizationmentioning
confidence: 99%
“…The In spectrum (Figure d) showed peaks at 445.1 (3d 5/2 ) and 452.6 (3d 3/2 ), which can be assigned to the In 2 S 3 compound with a splitting energy of 7.5 eV. The peak at 442.3 eV found after the peak deconvoluted was ascribed to the Bi 4d 5/2 signal of the Bi–S bonds.…”
Section: Resultsmentioning
confidence: 96%
“…As a typical n-type III-VI group chalcogenide semiconductor, In 2 S 3 with narrow band gap of 2.0-2.3 eV has attracted great interest for various applications recently [35]. Owing to its high photoelectric sensitivity, high photoconductivity, large photoelectric conversion yield, low toxicity, and high absorption coefficient [36][37][38], In 2 S 3 shows superior properties in optical-absorption applications such as photoanodes [35,[39][40][41][42][43][44][45], photocatalysts [36,[46][47][48][49][50][51][52][53], solar cells [54], photocatalytic conversion of carbon dioxide (CO 2 ) reduction [55,56], electrochemical storage cells [57], and photodetectors [37,58,59].…”
Section: Introductionmentioning
confidence: 99%