Preparation of β-Ga2O3 nanostructured films by thermal oxidation of GaAs substrate

Chen, Wei; Jiao, Teng; Li, Zeming; Diao, Zhaoti; Li, Zhengda; Dong, Xiaoli; Zhang, Yuantao; Zhang, Baolin

doi:10.1016/j.ceramint.2021.11.115

Cited by 9 publications

(3 citation statements)

References 27 publications

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“…Firstly, the preheating stage prepares the wafer for annealing, which ensure homogeneous heating during the heating stage and reduce the crack formation by the As moving to the surface. Complete sublimation is then achieved by heating the samples to 880 • C, above the sublimation temperature of As (>600 • C) [23]. Finally, as the wafer is rich in Ga, oxygen near the surface reacts with it, forming stable Ga 2 O 3 bonds.…”

Section: Methodsmentioning

confidence: 99%

“…Material implementation could be used by exploring techniques such as epitaxial growth and thermal oxidation (TO) of Ga-based wafers to obtain Ga 2 O 3 [21,22]. TO of Ga-based wafers such as gallium nitride and gallium arsenide (GaAs) wafers have been studied to prepare Ga 2 O 3 due to the autogenous supply, which results in the high efficiency of the fabrication process [23].…”

Section: Introductionmentioning

confidence: 99%

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Study and characterization of the nanotextured Ga₂O₃-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air

Solís-Cisneros,

Vilchis,

Hernández-Trejo

et al. 2023

Semicond. Sci. Technol.

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In this work, we present the characterization of a UV-sensitive material based on Ga2O3-GaOOH, which was obtained through the thermal oxidation of GaAs wafers in ambient air to achieve Ga2O3. The material’s oxidation mechanism was thoroughly examined using structural, compositional, and optical approaches. X-ray diffraction analysis identified the presence of the β-Ga2O3 crystalline phase, with both in-plane and out-of-plane preferred orientations, along with crystalline inclusions attributed to GaOOH. Furthermore, energy-dispersive spectroscopy confirmed the uniform sublimation of Arsenic, as evidenced by elemental mapping, while Fourier-transform infrared spectroscopy suggested the inclusion of −OH bonds. Surface analysis was carried out by field emission scanning electron microscopy and atomic force microscopy, revealing a grain size of approximately 20 nm. Finally, UV-Vis characterization unveiled a bandgap ranging from 2.9 to 3.9 eV, indicative of the material’s potential for UV-sensitive applications. Overall, the results demonstrate the consistency and reliability of the oxidation process, providing valuable insights into the properties of the Ga2O3-GaOOH material for potential technological advancements.

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Section: Methodsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Study and characterization of the nanotextured Ga₂O₃-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air

Solís-Cisneros,

Vilchis,

Hernández-Trejo

et al. 2023

Semicond. Sci. Technol.

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show abstract

“…Nowadays, with the improvement of crystal growth technology, large-scale Ga 2 O 3 single crystals have been produced, such as pulling method, guided mode method, and floating zone melting method [8]. There is also a method of heteroepitaxial growth of gallium oxide thin films on substrates such as quartz glass, sapphire, silicon, and gallium arsenide [9][10][11].…”

Section: Sic Power Diodesmentioning

confidence: 99%

New Electronic Devices for Power Converters

Kong

2023

Power Electronics, Radio Frequency and Microwave Engineering [Working Title]

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Power electronic devices are crucial components of power converter systems. The evolution of power devices drives the development of power converters, including improvements in performance, reliability, and power capacity. In this chapter, the author expounds the structure, working principle, and static and dynamic characteristics of the conventional PN junction diode. And the silicon carbide (SiC) Schottky barrier diode (SBD), junction barrier Schottky (JBS) diode, trench JBS (T-JBS) diode, and sidewall-enhanced trench JBS (SET-JBS) diode are also discussed and compared. Also, the structures and properties of the gallium oxide (Ga2O3) SBD and heterojunction diode are also summarized. Next, the author gives a detailed analysis and discussion of the silicon power metal-oxide-semiconductor field-effect transistor (MOSFET), superjunction MOSFET, and the SiC MOSFET and JFET, and the Ga2O3 MOSFET. Then, the device structure and operating principle, switching characteristics, and current tailing mechanism of the insulated gate bipolar transistor (IGBT) are also analyzed and summarized in detail. Finally, the energy band structure, working principle, and switching characteristic of the gallium nitride (GaN) high-electron mobility transistor (HEMT), one of the hot devices in the current market, are also described. Finally, the summary and prospect of power electronic devices are also presented in this chapter.

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Recent progresses in thermal treatment of β-Ga2O3 single crystals and devices

Yan,

Jin,

Zhang

et al. 2024

Int J Miner Metall Mater

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Preparation of β-Ga2O3 nanostructured films by thermal oxidation of GaAs substrate

Cited by 9 publications

References 27 publications

Study and characterization of the nanotextured Ga₂O₃-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air

Study and characterization of the nanotextured Ga₂O₃-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air

New Electronic Devices for Power Converters

Recent progresses in thermal treatment of β-Ga2O3 single crystals and devices

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Preparation of β-Ga2O3 nanostructured films by thermal oxidation of GaAs substrate

Cited by 9 publications

References 27 publications

Study and characterization of the nanotextured Ga2O3-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air

Study and characterization of the nanotextured Ga2O3-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air

New Electronic Devices for Power Converters

Recent progresses in thermal treatment of β-Ga2O3 single crystals and devices

Contact Info

Product

Resources

About

Study and characterization of the nanotextured Ga₂O₃-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air

Study and characterization of the nanotextured Ga₂O₃-GaOOH formations synthesized via thermal oxidation of GaAs in ambient air